Invention Grant
- Patent Title: Semiconductor device and method of forming the same
-
Application No.: US17032571Application Date: 2020-09-25
-
Publication No.: US11672130B2Publication Date: 2023-06-06
- Inventor: Jonguk Kim , Dongsung Choi , Kwangmin Park , Jaeho Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20190147360 2019.11.18
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00

Abstract:
A semiconductor device and a method of forming the same are provided. The semiconductor device including a first conductive line on a substrate, memory cell structures stacked on the first conductive line, a second conductive line between the memory cell structures; and a third conductive line on the memory cell structures may be provided. Each of the plurality of memory cell structures includes a data storage material pattern, a switching material pattern, and a plurality of electrode patterns, at least one of the electrode patterns includes at least one of carbon material layer or a carbon-containing material layer, and the at least one of the electrode patterns includes a first region doped with a nitrogen and a second region that is not doped with the nitrogen, or is doped with the nitrogen at a first concentration lower than a second concentration of the nitrogen in the first region.
Public/Granted literature
- US20210151506A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2021-05-20
Information query
IPC分类: