- 专利标题: Extended error detection for a memory device
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申请号: US17348211申请日: 2021-06-15
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公开(公告)号: US11675662B2公开(公告)日: 2023-06-13
- 发明人: Scott E. Schaefer , Jongtae Kwak , Aaron P. Boehm
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Holland & Hart LLP
- 主分类号: G06F11/10
- IPC分类号: G06F11/10 ; G11C7/10
摘要:
Methods, systems, and devices for extended error detection for a memory device are described. For example, during a read operation, the memory device may perform an error detection operation capable of detecting single-bit errors, double-bit errors, and errors that impact more than two bits and indicate the detected error to a host device. The memory device may use parity information to perform an error detection procedure to detect and/or correct errors within data retrieved during the read operation. In some cases, the memory device may associate each bit of the data read during the read operation with two or more bits of parity information. For example, the memory device may use two or more sets of parity bits to detect errors within a matrix of the data. Each set of parity bits may correspond to a dimension of the matrix of data.
公开/授权文献
- US20210311829A1 EXTENDED ERROR DETECTION FOR A MEMORY DEVICE 公开/授权日:2021-10-07
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