发明授权
- 专利标题： Substrate processing apparatus and control method of substrate processing apparatus
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申请号： US17241442申请日： 2021-04-27
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公开(公告)号： US11676800B2公开(公告)日： 2023-06-13
- 发明人: Ikko Tanaka , Lifu Li , Hiroshi Tsujimoto , Atsushi Terasawa
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Xsensus LLP
- 优先权： JP 2020078481 2020.04.27
- 主分类号： H01J37/32
- IPC分类号： H01J37/32
摘要：
A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.
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