公开(公告)号：US20180218882A1

公开(公告)日：2018-08-02

申请号：US15938006

申请日：2018-03-28

Applicant: Tokyo Electron Limited

Inventor： Kumiko Ono ,  Hiroshi Tsujimoto ,  Koichi Nagami

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32577

Abstract: In a plasma processing method includes a first stage of generating plasma of a first processing gas and a second stage of generating plasma of a second processing gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second processing gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first processing gas and the second processing gas in the second stage is specified from a function or a table.

公开(公告)号：US09818582B2

公开(公告)日：2017-11-14

申请号：US15180672

申请日：2016-06-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiraku Murakami ,  Nobutaka Sasaki ,  Shigeru Senzaki ,  Takanori Banse ,  Hiroshi Tsujimoto ,  Keigo Toyoda

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32477 ,  H01J37/32504

Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.

公开(公告)号：US09728418B2

公开(公告)日：2017-08-08

申请号：US14785392

申请日：2014-05-21

Applicant: Tokyo Electron Limited

Inventor： Keigo Toyoda ,  Masaru Isago ,  Hiroshi Tsujimoto

IPC: H01L21/3065 ,  H01L21/683 ,  H01L21/67 ,  H01L21/66 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32522 ,  H01J37/32642 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/6831 ,  H01L22/26

Abstract: An etching method for performing a plasma etching on an object to be processed by using a supplied gas is provided. In the etching method, a temperature of a focus ring is adjusted by using a first temperature adjustment mechanism controllable independently of a temperature control of the object to be processed while measuring a time variation until the temperature of the focus ring reaches a target value. A degree of consumption of the focus ring is estimated from the measured time variation based on a preliminarily set correlation between the time variation and the degree of consumption of the focus ring. The target value of the temperature of the focus ring is corrected based on the estimated degree of consumption of the focus ring.

公开(公告)号：US11538707B2

公开(公告)日：2022-12-27

申请号：US16830879

申请日：2020-03-26

Applicant: Tokyo Electron Limited

Inventor： Toru Takahashi ,  Hiroshi Tsujimoto ,  Nobuaki Shindo ,  Shigeru Yoneda

IPC: H01L21/683 ,  H01L21/66 ,  H01J37/32 ,  H01L21/3065

Abstract: A method of processing a substrate includes: a placement step of placing the substrate on an electrostatic chuck set to have a predetermined temperature; a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck; a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less; and a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck.

公开(公告)号：US10480978B2

公开(公告)日：2019-11-19

申请号：US15938916

申请日：2018-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kumiko Ono ,  Hiroshi Tsujimoto

IPC: G06F19/00 ,  G01F1/86 ,  H01L21/67 ,  G05D7/06 ,  H01L21/683 ,  H01J37/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/09

Abstract: A method according to an aspect includes outputting gas continuously from a flow rate controller, closing a valve, obtaining a first pressure rise characteristic, outputting the gas intermittently from the flow rate controller, closing the valve, obtaining a second pressure rise characteristic, obtaining a third pressure rise characteristic, obtaining a fourth pressure rise characteristic, obtaining a first required time required from the third pressure rise characteristic, obtaining a second required time from the fourth pressure rise characteristic, obtaining an estimated time until a predetermined pressure is reached, in a case where the intermittent output of the gas is performed assuming that there is no delay time, and obtaining a parameter representing a difference between the estimated time and the second required time.

公开(公告)号：US10410840B2

公开(公告)日：2019-09-10

申请号：US14614900

申请日：2015-02-05

Applicant: Tokyo Electron Limited

Inventor： Tomoyuki Mizutani ,  Hiroshi Tsujimoto

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/67 ,  C23C14/54 ,  C23C16/455

Abstract: A gas supplying method of supplying a process gas containing a gas of at least one gaseous species into a process space in a semiconductor manufacturing apparatus includes supplying the process gas by controlling a flow rate value of the gas to be a first value during a first period; supplying the process gas by controlling the flow rate value of the gas to be a second value smaller than the first value during a second period; supplying the process gas by controlling the flow rate value of the gas to be a third value greater than the first value during a third period; and supplying the process gas by controlling the flow rate value of the gas to be a fourth value smaller than the second value during a fourth period, wherein these steps are periodically repeated in a predetermined order.

公开(公告)号：US10163607B2

公开(公告)日：2018-12-25

申请号：US15175229

申请日：2016-06-07

Applicant: Tokyo Electron Limited

Inventor： Keigo Toyoda ,  Hiroshi Tsujimoto

IPC: H01J37/32

Abstract: A method for controlling the temperature of a mounting table in a plasma processing apparatus, includes: calculating a first heat input amount according to high frequency power applied in a given process, wherein the first heat input amount is calculated based on a data table, the data table being generated by measuring temperatures so as to find a first relationship between the high frequency power applied in the plasma processing apparatus and the heat input amount to the mounting table; controlling, based on an operation map, the temperature of at least one of the first heating mechanism and the cooling mechanism so that a first temperature difference between the cooling mechanism and the first heating mechanism is within a controllable range corresponding to the first heat input amount, wherein the temperature of the first heating mechanism is controllable upon the first temperature difference falling within the controllable.

公开(公告)号：US20150243489A1

公开(公告)日：2015-08-27

申请号：US14623765

申请日：2015-02-17

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Uda ,  Hiroshi Tsujimoto ,  Akitoshi Harada ,  Hideaki Yakushiji ,  Masaharu Sugiyama

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  H01L21/31116 ,  H01L21/31144

Abstract: A Ti-containing remaining in a chamber of a plasma processing apparatus can be simply and efficiently removed. In a Low-k film etching process, immediately after a dry etching process (process S2) is finished, a dry cleaning process is performed in the presence of a wafer while the wafer is held on an electrostatic chuck 40 (process S3). The dry cleaning process (process S3) is performed to mainly remove the Ti-containing reactant remaining in the chamber 10. To this end, a cleaning gas containing a H2 gas and a N2 gas is introduced into the chamber 10 from a processing gas supply unit 70 at a preset flow rate ratio. Then, a first high frequency power HF for plasma generation is applied to a susceptor 12 at a preset power level, so that plasma is generated within the chamber 10 by the high frequency discharge of the cleaning gas.

Abstract translation: 可以简单有效地除去留在等离子体处理装置的室中的含Ti。 在Low-k膜蚀刻工艺中，在干法蚀刻工艺（工艺S2）完成之后，在晶片保持在静电卡盘40上的情况下，在晶片存在下进行干法处理（工艺S3）。 进行干燥处理（工序S3），以主要除去残留在室10中的含Ti反应物。为此，将含有H 2气体和N 2气体的清洗气体从处理气体供给 单元70以预设的流量比率。 然后，用于等离子体产生的第一高频功率HF以预设的功率电平施加到基座12，使得通过清洁气体的高频放电在腔室10内产生等离子体。

公开(公告)号：US10861675B2

公开(公告)日：2020-12-08

申请号：US16239756

申请日：2019-01-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takao Funakubo ,  Hirofumi Haga ,  Shinichi Kozuka ,  Wataru Ozawa ,  Akihiro Sakamoto ,  Naoki Taniguchi ,  Hiroshi Tsujimoto ,  Kumiko Ono

IPC: H01J37/32

Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.

公开(公告)号：US09960016B2

公开(公告)日：2018-05-01

申请号：US15464503

申请日：2017-03-21

Applicant: Tokyo Electron Limited

Inventor： Kumiko Ono ,  Hiroshi Tsujimoto ,  Koichi Nagami

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32577

Abstract: In a plasma processing method in which multiple cycles, each of which includes a first stage of generating plasma of a first processing gas containing a first gas and a second stage of generating plasma of a second processing gas containing the first gas and a second gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first gas and the second gas in the second stage is specified from a function or a table. The output of the second gas is begun prior to the start time point of the second stage by a time difference set based on the delay time.