Invention Grant
- Patent Title: Patterned structure
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Application No.: US17234818Application Date: 2021-04-20
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Publication No.: US11676815B2Publication Date: 2023-06-13
- Inventor: Feng-Yi Chang , Fu-Che Lee
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu; CN Quanzhou
- Agent Winston Hsu
- Priority: CN 1810243170.0 2018.03.23
- The original application number of the division: US15956722 2018.04.18
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/027 ; H01L21/311 ; H01L21/768
Abstract:
A patterning method includes the following steps. A mask layer is formed on a material layer. A first hole is formed in the mask layer by a first photolithography process. A first mask pattern is formed in the first hole. A second hole is formed in the mask layer by a second photolithography process. A first spacer is formed on an inner wall of the second hole. A second mask pattern is formed in the second hole after the step of forming the first spacer. The first spacer surrounds the second mask pattern in the second hole. The mask layer and the first spacer are removed. The pattern of the first mask pattern and the second mask pattern are transferred to the material layer by an etching process.
Public/Granted literature
- US20210242013A1 PATTERNED STRUCTURE Public/Granted day:2021-08-05
Information query
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