Invention Grant
- Patent Title: Method for fabricating semiconductor device
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Application No.: US17485541Application Date: 2021-09-27
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Publication No.: US11676823B2Publication Date: 2023-06-13
- Inventor: Tsung-Hsun Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110987039.7 2021.08.26
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02 ; H01L27/12 ; H01L21/8234 ; H01L21/8238
Abstract:
A method for fabricating a semiconductor device includes the steps of: providing a substrate having a first region, a second region, and a third region; forming a first gate oxide layer on the first region, the second region, and the third region; and performing an etching process and an infrared treatment process at the same time to completely remove the first gate oxide layer on the second region for exposing the substrate.
Public/Granted literature
- US20230064701A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2023-03-02
Information query
IPC分类:
