Invention Grant
- Patent Title: Electrostatic discharge protection in integrated circuits
-
Application No.: US17677877Application Date: 2022-02-22
-
Publication No.: US11676918B2Publication Date: 2023-06-13
- Inventor: Adel A. Elsherbini , Feras Eid , Johanna M. Swan , Aleksandar Aleksov , Veronica Aleman Strong
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP
- The original application number of the division: US16721442 2019.12.19
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/60 ; H01L23/48 ; H01L27/02 ; H01L23/00 ; H01L23/498

Abstract:
Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). For example, in some embodiments, an IC package support may include: a first conductive structure in a dielectric material; a second conductive structure in the dielectric material; and a material in contact with the first conductive structure and the second conductive structure, wherein the material includes a polymer, and the material is different from the dielectric material. The material may act as a dielectric material below a trigger voltage, and as a conductive material above the trigger voltage.
Public/Granted literature
- US20220181276A1 ELECTROSTATIC DISCHARGE PROTECTION IN INTEGRATED CIRCUITS Public/Granted day:2022-06-09
Information query
IPC分类: