- 专利标题： Semiconductor device
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申请号： US17307243申请日： 2021-05-04
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公开(公告)号： US11677023B2公开(公告)日： 2023-06-13
- 发明人: Jens Peter Konrath , Georg Pfusterschmied , Gregor Pobegen , Ulrich Schmid , Fabian Triendl
- 申请人： Infineon Technologies Austria AG
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 代理机构： Cooper Legal Group, LLC
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/16 ; H01L29/872
摘要：
A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a first trench is formed in a silicon carbide layer. A second trench is formed in the silicon carbide layer to define a mesa in the silicon carbide layer between the first trench and the second trench. A first doped semiconductor material is formed in the first trench and a second doped semiconductor material is formed in the second trench. A third doped semiconductor material is formed over the mesa to define a heterojunction at an interface between the third doped semiconductor material and the mesa.
公开/授权文献
- US20220359748A1 SEMICONDUCTOR DEVICE 公开/授权日：2022-11-10
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