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公开(公告)号：US20180158964A1
公开(公告)日：2018-06-07
申请号：US15865976
申请日：2018-01-09
发明人： Jens Peter Konrath , Ronny Kern , Stefan Krivec , Ulrich Schmid , Laura Stoeber
IPC分类号： H01L29/872 , H01L29/868 , H01L29/66 , H01L29/16 , H01L29/06 , H01L21/04 , H01L29/20
CPC分类号： H01L29/872 , H01L21/0495 , H01L29/0619 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/6606 , H01L29/868
摘要： An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.
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2.发明申请公开(公告)号：US20160276452A1
公开(公告)日：2016-09-22
申请号：US15040353
申请日：2016-02-10
发明人： Jens Peter Konrath , Ronny Kern , Stefan Krivec , Ulrich Schmid , Laura Stoeber
IPC分类号： H01L29/47 , H01L29/20 , H01L29/16 , H01L29/161 , H01L21/02 , H01L21/285
摘要： A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.
摘要翻译： 半导体器件包括具有衬底表面的n掺杂单晶半导体衬底，在n掺杂单晶半导体衬底的衬底表面处的非晶n掺杂半导体表面层和与非晶n相接触的肖特基结形成材料 掺杂的半导体表面层。 肖特基结形成材料与非晶n掺杂半导体表面层形成至少一个肖特基接触。
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公开(公告)号：US10199514B2
公开(公告)日：2019-02-05
申请号：US15865976
申请日：2018-01-09
发明人： Jens Peter Konrath , Ronny Kern , Stefan Krivec , Ulrich Schmid , Laura Stoeber
IPC分类号： H01L29/872 , H01L29/16 , H01L21/04 , H01L29/66 , H01L29/868 , H01L29/06 , H01L29/20
摘要： An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.
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公开(公告)号：US20150087129A1
公开(公告)日：2015-03-26
申请号：US14035185
申请日：2013-09-24
IPC分类号： H01L29/36
CPC分类号： H01L29/36 , H01L21/26513 , H01L29/872
摘要： A method for producing semiconductor regions including impurities includes forming a trench in a first surface of a semiconductor body. Impurity atoms are implanted into a bottom of the trench. The trench is extended deeper into the semiconductor body, thereby forming a deeper trench. Impurity atoms are implanted into a bottom of the deeper trench.
摘要翻译： 包括杂质的半导体区域的制造方法包括在半导体本体的第一表面形成沟槽。 杂质原子被植入沟槽的底部。 沟槽深入半导体本体，从而形成更深的沟槽。 杂质原子被植入深沟槽的底部。
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公开(公告)号：US11677023B2
公开(公告)日：2023-06-13
申请号：US17307243
申请日：2021-05-04
IPC分类号： H01L29/78 , H01L29/66 , H01L29/16 , H01L29/872
CPC分类号： H01L29/7827 , H01L29/1608 , H01L29/66143 , H01L29/66666 , H01L29/872 , H01L29/8725
摘要： A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a first trench is formed in a silicon carbide layer. A second trench is formed in the silicon carbide layer to define a mesa in the silicon carbide layer between the first trench and the second trench. A first doped semiconductor material is formed in the first trench and a second doped semiconductor material is formed in the second trench. A third doped semiconductor material is formed over the mesa to define a heterojunction at an interface between the third doped semiconductor material and the mesa.
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公开(公告)号：US10763339B2
公开(公告)日：2020-09-01
申请号：US15040353
申请日：2016-02-10
发明人： Jens Peter Konrath , Ronny Kern , Stefan Krivec , Ulrich Schmid , Laura Stoeber
IPC分类号： H01L29/872 , H01L29/47 , H01L21/302 , H01L21/3065 , H01L29/06 , H01L29/40 , H01L29/66 , H01L21/02 , H01L21/285 , H01L29/16 , H01L29/161 , H01L21/04 , H01L29/20
摘要： A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.
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7.发明申请公开(公告)号：US20160181441A1
公开(公告)日：2016-06-23
申请号：US14971823
申请日：2015-12-16
发明人： Jens Peter Konrath , Ronny Kern , Stefan Krivec , Ulrich Schmid , Laura Stoeber
IPC分类号： H01L29/872 , H01L29/66 , H01L29/16
CPC分类号： H01L29/872 , H01L21/0495 , H01L29/0619 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/6606 , H01L29/868
摘要： A semiconductor device includes a semiconductor material having a bandgap larger than 2 eV and less than 10 eV, and a contact layer in contact with the semiconductor material. The contact layer includes a metal nitride. A non-ohmic contact is formed between the semiconductor material and the contact layer.
摘要翻译： 半导体器件包括具有大于2eV且小于10eV的带隙的半导体材料以及与半导体材料接触的接触层。 接触层包括金属氮化物。 在半导体材料和接触层之间形成非欧姆接触。
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公开(公告)号：US20190140111A1
公开(公告)日：2019-05-09
申请号：US16238213
申请日：2019-01-02
发明人： Jens Peter Konrath , Ronny Kern , Stefan Krivec , Ulrich Schmid , Laura Stoeber
IPC分类号： H01L29/872 , H01L29/868 , H01L21/04 , H01L29/06 , H01L29/16 , H01L29/66
CPC分类号： H01L29/872 , H01L21/0495 , H01L29/0619 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/6606 , H01L29/868
摘要： According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.
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9.发明授权公开(公告)号：US10431698B2
公开(公告)日：2019-10-01
申请号：US16238213
申请日：2019-01-02
发明人： Jens Peter Konrath , Ronny Kern , Stefan Krivec , Ulrich Schmid , Laura Stoeber
IPC分类号： H01L29/872 , H01L29/16 , H01L21/04 , H01L29/66 , H01L29/868 , H01L29/06 , H01L29/20
摘要： According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.
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公开(公告)号：US09029250B2
公开(公告)日：2015-05-12
申请号：US14035185
申请日：2013-09-24
IPC分类号： H01L21/265 , H01L29/36
CPC分类号： H01L29/36 , H01L21/26513 , H01L29/872
摘要： A method for producing semiconductor regions including impurities includes forming a trench in a first surface of a semiconductor body. Impurity atoms are implanted into a bottom of the trench. The trench is extended deeper into the semiconductor body, thereby forming a deeper trench. Impurity atoms are implanted into a bottom of the deeper trench.
摘要翻译： 包括杂质的半导体区域的制造方法包括在半导体本体的第一表面形成沟槽。 杂质原子被植入沟槽的底部。 沟槽深入半导体本体，从而形成更深的沟槽。 杂质原子被植入深沟槽的底部。
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