The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.