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    Method for operating independently controlled laser diodes in a device where a subset of laser diodes can be operated in their nominal current range
    1.
    发明授权
    Method for operating independently controlled laser diodes in a device where a subset of laser diodes can be operated in their nominal current range 有权

    公开(公告)号：US12176678B2

    公开(公告)日：2024-12-24

    申请号：US16772709

    申请日：2018-11-29

    Applicant: OSRAM OLED GmbH

    Inventor： Roland Heinrich Enzmann ,  Hubert Halbritter ,  Michael Klein

    IPC: H01S5/042 ,  H01S3/10 ,  H01S5/06 ,  H01S5/062 ,  H01S5/42 ,  H01S5/40

    Abstract: In at least one embodiment of the method of operating a laser device (100) having a plurality of laser diodes (1) which can be controlled independently of one another, wherein controlled laser diodes are each operated with an operating current (I), and wherein each laser diode can be operated for a proper operation in a nominal current range (ΔI), a step A) is carried out in which an input current (I_0) or an input voltage (U_0) is applied to the laser device. Furthermore, a step B) is carried out in which a characteristic value is determined that is representative of a number N of laser diodes that can be operated in the respective nominal current range with the input current applied in step A) or with the input voltage applied in step A). If the characteristic value is representative of N≥1, M laser diodes are controlled in a step C) in such a way that the M laser diodes are each operated in the nominal current range, wherein 1≤M≤N is selected.

    SEMICONDUCTOR CHIPS AND METHOD FOR PRODUCING SEMICONDUCTOR CHIPS
    5.
    发明申请
    SEMICONDUCTOR CHIPS AND METHOD FOR PRODUCING SEMICONDUCTOR CHIPS 审中-公开

    公开(公告)号：US20200287089A1

    公开(公告)日：2020-09-10

    申请号：US16753808

    申请日：2018-09-25

    Applicant: OSRAM OLED GmbH

    Inventor： Roland Heinrich Enzmann ,  Lorenzo Zini ,  Vanessa Eichinger ,  Jochen Brendt

    IPC: H01L33/38 ,  H01L33/14

    Abstract: A semiconductor chip may include a substrate and a semiconductor body positioned thereon. The semiconductor body has a first semiconductor layer and a second semiconductor layer with an active zone sandwiched therebetween. At least one current spreading layer is designed to electrically contact the first semiconductor layer positioned between the substrate and the semiconductor body. A metal layer is designed to electrically contact the second semiconductor layer positioned between the substrate and the current spreading layer where the metal layer fully covers the current spreading layer. An insulating layer may be positioned between the current spreading layer and the metal layer in the vertical direction to where the metal layer is electrically insulated from the current spreading layer.

    Radiation source for emitting terahertz radiation
    7.
    发明授权
    Radiation source for emitting terahertz radiation 有权

    公开(公告)号：US11513420B2

    公开(公告)日：2022-11-29

    申请号：US16769161

    申请日：2018-12-05

    Applicant: OSRAM OLED GmbH

    Inventor： Hubert Halbritter ,  Roland Heinrich Enzmann

    IPC: G02F2/00 ,  H01S5/00 ,  H01S5/40 ,  H01S5/42

    Abstract: A radiation source for emitting terahertz radiation (6) is specified, comprising at least two laser light sources emitting laser radiation (11, 12) of different frequencies, and a photomixer (5) comprising a photoconductive semiconductor material (51) and an antenna structure (52), the photomixer (5) being configured to emit the laser radiation (11, 12) of the laser light sources (1, 2) and emitting terahertz radiation (6) with at least one beat frequency of the laser light sources, and wherein the at least two laser light sources are surface-emitting semiconductor lasers (1, 2) which are arranged in a one-dimensional or two-dimensional array on a common carrier (10).

    Optoelectronic semiconductor chip
    8.
    发明授权
    Optoelectronic semiconductor chip 有权

    公开(公告)号：US11456404B2

    公开(公告)日：2022-09-27

    申请号：US16758401

    申请日：2018-10-25

    Applicant: OSRAM OLED GmbH

    Inventor： Roland Heinrich Enzmann ,  Lorenzo Zini ,  Vanessa Eichinger ,  Stefan Barthel

    IPC: H01L33/62 ,  H01L33/38

    Abstract: An optoelectronic semiconductor chip may include a semiconductor body, a first and second contact element, a chip carrier, an electrically conductive contact layer, an electrically conductive supply layer, an insulating layer between the contact layer and the supply layer, and at least one electrically conductive feed-through element embedded in the insulating layer. The feed-through element(s) may electrically connect the supply layer to the contact layer. A quantity and/or size of the feed-through elements may be greater on a second side of the semiconductor body opposite to the first side than on the first side.

    Semiconductor chips and method for producing semiconductor chips
    9.
    发明授权
    Semiconductor chips and method for producing semiconductor chips 有权

    公开(公告)号：US11195974B2

    公开(公告)日：2021-12-07

    申请号：US16753808

    申请日：2018-09-25

    Applicant: OSRAM OLED GmbH

    Inventor： Roland Heinrich Enzmann ,  Lorenzo Zini ,  Vanessa Eichinger ,  Jochen Brendt

    IPC: H01L33/38 ,  H01L33/14 ,  H01L33/62

    Abstract: A semiconductor chip may include a substrate and a semiconductor body positioned thereon. The semiconductor body has a first semiconductor layer and a second semiconductor layer with an active zone sandwiched therebetween. At least one current spreading layer is designed to electrically contact the first semiconductor layer positioned between the substrate and the semiconductor body. A metal layer is designed to electrically contact the second semiconductor layer positioned between the substrate and the current spreading layer where the metal layer fully covers the current spreading layer. An insulating layer may be positioned between the current spreading layer and the metal layer in the vertical direction to where the metal layer is electrically insulated from the current spreading layer.

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