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11 条记录 (耗时 0.016 秒)

    SEMICONDUCTOR CHIPS AND METHOD FOR PRODUCING SEMICONDUCTOR CHIPS
    4.
    发明申请
    SEMICONDUCTOR CHIPS AND METHOD FOR PRODUCING SEMICONDUCTOR CHIPS 审中-公开

    公开(公告)号：US20200287089A1

    公开(公告)日：2020-09-10

    申请号：US16753808

    申请日：2018-09-25

    申请人： OSRAM OLED GmbH

    发明人： Roland Heinrich Enzmann ,  Lorenzo Zini ,  Vanessa Eichinger ,  Jochen Brendt

    IPC分类号： H01L33/38 ,  H01L33/14

    摘要： A semiconductor chip may include a substrate and a semiconductor body positioned thereon. The semiconductor body has a first semiconductor layer and a second semiconductor layer with an active zone sandwiched therebetween. At least one current spreading layer is designed to electrically contact the first semiconductor layer positioned between the substrate and the semiconductor body. A metal layer is designed to electrically contact the second semiconductor layer positioned between the substrate and the current spreading layer where the metal layer fully covers the current spreading layer. An insulating layer may be positioned between the current spreading layer and the metal layer in the vertical direction to where the metal layer is electrically insulated from the current spreading layer.

    Radiation source for emitting terahertz radiation
    5.
    发明授权
    Radiation source for emitting terahertz radiation 有权

    公开(公告)号：US11513420B2

    公开(公告)日：2022-11-29

    申请号：US16769161

    申请日：2018-12-05

    申请人： OSRAM OLED GmbH

    发明人： Hubert Halbritter ,  Roland Heinrich Enzmann

    IPC分类号： G02F2/00 ,  H01S5/00 ,  H01S5/40 ,  H01S5/42

    摘要： A radiation source for emitting terahertz radiation (6) is specified, comprising at least two laser light sources emitting laser radiation (11, 12) of different frequencies, and a photomixer (5) comprising a photoconductive semiconductor material (51) and an antenna structure (52), the photomixer (5) being configured to emit the laser radiation (11, 12) of the laser light sources (1, 2) and emitting terahertz radiation (6) with at least one beat frequency of the laser light sources, and wherein the at least two laser light sources are surface-emitting semiconductor lasers (1, 2) which are arranged in a one-dimensional or two-dimensional array on a common carrier (10).

    Optoelectronic semiconductor chip
    6.
    发明授权
    Optoelectronic semiconductor chip 有权

    公开(公告)号：US11456404B2

    公开(公告)日：2022-09-27

    申请号：US16758401

    申请日：2018-10-25

    申请人： OSRAM OLED GmbH

    发明人： Roland Heinrich Enzmann ,  Lorenzo Zini ,  Vanessa Eichinger ,  Stefan Barthel

    IPC分类号： H01L33/62 ,  H01L33/38

    摘要： An optoelectronic semiconductor chip may include a semiconductor body, a first and second contact element, a chip carrier, an electrically conductive contact layer, an electrically conductive supply layer, an insulating layer between the contact layer and the supply layer, and at least one electrically conductive feed-through element embedded in the insulating layer. The feed-through element(s) may electrically connect the supply layer to the contact layer. A quantity and/or size of the feed-through elements may be greater on a second side of the semiconductor body opposite to the first side than on the first side.

    Semiconductor chips and method for producing semiconductor chips
    7.
    发明授权
    Semiconductor chips and method for producing semiconductor chips 有权

    公开(公告)号：US11195974B2

    公开(公告)日：2021-12-07

    申请号：US16753808

    申请日：2018-09-25

    申请人： OSRAM OLED GmbH

    发明人： Roland Heinrich Enzmann ,  Lorenzo Zini ,  Vanessa Eichinger ,  Jochen Brendt

    IPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/62

    摘要： A semiconductor chip may include a substrate and a semiconductor body positioned thereon. The semiconductor body has a first semiconductor layer and a second semiconductor layer with an active zone sandwiched therebetween. At least one current spreading layer is designed to electrically contact the first semiconductor layer positioned between the substrate and the semiconductor body. A metal layer is designed to electrically contact the second semiconductor layer positioned between the substrate and the current spreading layer where the metal layer fully covers the current spreading layer. An insulating layer may be positioned between the current spreading layer and the metal layer in the vertical direction to where the metal layer is electrically insulated from the current spreading layer.

    Semiconductor laser and method for producing such a semiconductor laser
    10.
    发明授权
    Semiconductor laser and method for producing such a semiconductor laser 有权

    公开(公告)号：US10797469B2

    公开(公告)日：2020-10-06

    申请号：US16343989

    申请日：2018-01-09

    申请人： OSRAM OLED GmbH

    发明人： Hubert Halbritter ,  Andreas Plößl ,  Roland Heinrich Enzmann ,  Martin Rudolf Behringer

    IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/022 ,  H01S5/42 ,  H01S5/042 ,  H01S5/187

    摘要： A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.