Invention Grant
- Patent Title: Structure for integrated microphone
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Application No.: US17020153Application Date: 2020-09-14
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Publication No.: US11678133B2Publication Date: 2023-06-13
- Inventor: Jung-Huei Peng , Chia-Hua Chu , Chun-Wen Cheng , Chin-Yi Cho , Li-Min Hung , Yao-Te Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- The original application number of the division: US15018625 2016.02.08
- Main IPC: H04R31/00
- IPC: H04R31/00 ; B81C1/00 ; H04R19/00 ; H04R19/04

Abstract:
The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.
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