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公开(公告)号：US20150093303A1
公开(公告)日：2015-04-02
申请号：US14040303
申请日：2013-09-27
Inventor： Shang-Ying Tsai , Li-Min Hung , Jung-Huei Peng
CPC classification number: B01L3/502707 , B01J2219/00286 , B01J2219/00382 , B01J2219/00637 , B01L3/502715 , B01L2200/12 , B01L2300/0636 , B01L2300/0877 , B01L2300/0887 , B01L2300/0896 , B01L2300/12 , B32B37/30 , B32B2307/412 , B82Y30/00
Abstract: The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.
Abstract translation: 本公开提供流动池和制造流动池的方法。 该方法包括在第一基板和具有光致抗蚀剂干膜的壁的第二基板之间组合三个部分：第一基板，第二基板和微流体通道。 用于入口和出口的通孔形成在第一衬底或第二衬底中。 图案化捕获位点通过纳米压印光刻工艺冲压在第一衬底和第二衬底上。 在其他实施例中，图案化捕获位点的部分选择性地附着到由设置在软底层的露头上的氧化硅岛形成的表面化学图案。
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公开(公告)号：US20160271607A1
公开(公告)日：2016-09-22
申请号：US15167764
申请日：2016-05-27
Inventor： Shang-Ying Tsai , Li-Min Hung , Jung-Huei Peng
CPC classification number: B01L3/502707 , B01J2219/00286 , B01J2219/00382 , B01J2219/00637 , B01L3/502715 , B01L2200/12 , B01L2300/0636 , B01L2300/0877 , B01L2300/0887 , B01L2300/0896 , B01L2300/12 , B32B37/30 , B32B2307/412 , B82Y30/00
Abstract: The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.
Abstract translation: 本公开提供流动池和制造流动池的方法。 该方法包括在第一基板和具有光致抗蚀剂干膜的壁的第二基板之间组合三个部分：第一基板，第二基板和微流体通道。 用于入口和出口的通孔形成在第一衬底或第二衬底中。 图案化捕获位点通过纳米压印光刻工艺冲压在第一衬底和第二衬底上。 在其他实施例中，图案化捕获位点的部分选择性地附着到由设置在软底层的露头上的氧化硅岛形成的表面化学图案。
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公开(公告)号：US20160157038A1
公开(公告)日：2016-06-02
申请号：US15018625
申请日：2016-02-08
Inventor： Jung-Huei Peng , Chia-Hua Chu , Chun-wen Cheng , Chin-Yi Cho , Li-Min Hung , Yao-Te Huang
CPC classification number: H04R31/003 , B81C1/00158 , B81C2201/0125 , B81C2201/013 , B81C2201/053 , B81C2203/036 , H04R19/005 , H04R19/04 , H04R31/006 , H04R2201/003 , H04R2307/027
Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.
Abstract translation: 本公开提供了集成麦克风结构的一个实施例。 集成麦克风结构包括图案化为第一板的第一硅衬底。 形成在第一硅衬底的一侧上的氧化硅层。 第二硅衬底通过氧化硅层与第一衬底结合，使得氧化硅层夹在第一和第二硅衬底之间。 一个膜片，其固定在氧化硅层上并且设置在第一和第二硅衬底之间，使得第一板和隔膜被配置成形成电容式麦克风。
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公开(公告)号：US20140220735A1
公开(公告)日：2014-08-07
申请号：US13759201
申请日：2013-02-05
Inventor： Yi-Chuan Teng , Jung-Huei Peng , Shang-Ying Tsai , Hsin-Ting Huang , Li-Min Hung , Yao-Te Huang , Chin-Yi Cho
IPC: H01L21/82
CPC classification number: H01L24/94 , H01L23/10 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2745 , H01L2224/27452 , H01L2224/2746 , H01L2224/2761 , H01L2224/27616 , H01L2224/29011 , H01L2224/29012 , H01L2224/29109 , H01L2224/29111 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2919 , H01L2224/32145 , H01L2224/83193 , H01L2224/83201 , H01L2224/83203 , H01L2224/94 , H01L2924/01322 , H01L2924/15787 , H01L2924/00 , H01L2224/83 , H01L2924/00014 , H01L2924/01029 , H01L2924/01032 , H01L2924/00012
Abstract: A wafer seal ring may be formed on a wafer having a pattern structure with a pattern density. The wafer seal ring pattern structure may include a plurality of lines having a width and a spacing that may be approximately equal to a width and a spacing of die bond rings on the wafer. The wafer having the wafer seal ring formed thereon may be bonded to a wafer that may not have a wafer seal ring. A pair of wafers may be formed with respective wafer seal rings formed in a corresponding manner. The pair of wafers may be bonded together with the wafer seal rings aligned and bonded together to form a seal ring structure between the bonded wafers.
Abstract translation: 可以在具有图案密度的图案结构的晶片上形成晶片密封环。 晶片密封环图案结构可以包括多个线，其宽度和间隔可以近似等于晶片上的芯片结合环的宽度和间隔。 其上形成有晶片密封环的晶片可以结合到可以没有晶片密封环的晶片。 可以形成一对晶片，以相应的方式形成相应的晶片密封环。 一对晶片可以结合在一起，晶片密封环对准并结合在一起，以在结合的晶片之间形成密封环结构。
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公开(公告)号：US11678133B2
公开(公告)日：2023-06-13
申请号：US17020153
申请日：2020-09-14
Inventor： Jung-Huei Peng , Chia-Hua Chu , Chun-Wen Cheng , Chin-Yi Cho , Li-Min Hung , Yao-Te Huang
CPC classification number: H04R31/003 , B81C1/00158 , H04R31/006 , B81C2201/013 , B81C2201/0125 , B81C2201/053 , B81C2203/036 , H04R19/005 , H04R19/04 , H04R2201/003 , H04R2307/027
Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.
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Patent Agency Ranking
公开(公告)号：US10273148B2
公开(公告)日：2019-04-30
申请号：US14826249
申请日：2015-08-14
Inventor： Chun-Wen Cheng , Jung-Huei Peng , Chia-Hua Chu , Nien-Tsung Tsai , Yao-Te Huang , Li-Min Hung , Yu-Chia Liu
Abstract: Some embodiments of the present disclosure provide a microelectromechanical systems (MEMS). The MEMS includes a semiconductive block. The semiconductive block includes a protruding structure. The protruding structure includes a bottom surface. The semiconductive block includes a sensing structure. A semiconductive substrate includes a conductive region. The conductive region includes a first surface under the sensing structure. The first surface is substantially coplanar with the bottom surface. A dielectric region includes a second surface not disposed over the first surface.
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公开(公告)号：US09998843B2
公开(公告)日：2018-06-12
申请号：US15018625
申请日：2016-02-08
Inventor： Jung-Huei Peng , Chia-Hua Chu , Chun-wen Cheng , Chin-Yi Cho , Li-Min Hung , Yao-Te Huang
CPC classification number: H04R31/003 , B81C1/00158 , B81C2201/0125 , B81C2201/013 , B81C2201/053 , B81C2203/036 , H04R19/005 , H04R19/04 , H04R31/006 , H04R2201/003 , H04R2307/027
Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.
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公开(公告)号：US09656260B2
公开(公告)日：2017-05-23
申请号：US15167764
申请日：2016-05-27
Inventor： Shang-Ying Tsai , Li-Min Hung , Jung-Huei Peng
CPC classification number: B01L3/502707 , B01J2219/00286 , B01J2219/00382 , B01J2219/00637 , B01L3/502715 , B01L2200/12 , B01L2300/0636 , B01L2300/0877 , B01L2300/0887 , B01L2300/0896 , B01L2300/12 , B32B37/30 , B32B2307/412 , B82Y30/00
Abstract: The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.
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公开(公告)号：US09643838B1
公开(公告)日：2017-05-09
申请号：US15017209
申请日：2016-02-05
Inventor： Chia-Hua Chu , Jung-Huei Peng , Yi-Chien Wu , Li-Min Hung
CPC classification number: B81B7/0038 , B81B2201/0235 , B81B2201/0242 , B81B2201/0271 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81C1/00285 , B81C2203/0118 , B81C2203/0145 , B81C2203/0792
Abstract: A semiconductor device includes a substrate, an interconnection layer, an outgassing layer, and a patterned outgassing barrier layer. The interconnection layer is over the substrate. The outgassing layer is over the interconnection layer. The patterned outgassing barrier layer is over the outgassing layer. The patterned outgassing barrier layer includes a plurality of barrier structures and a plurality of openings. The plurality of openings expose a portion of an upmost surface of the outgassing layer, and a bottommost surface of the patterned outgassing barrier layer is substantially coplanar with the upmost surface of the outgassing layer.
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公开(公告)号：US10779100B2
公开(公告)日：2020-09-15
申请号：US16001032
申请日：2018-06-06
Inventor： Jung-Huei Peng , Chia-Hua Chu , Chun-wen Cheng , Chin-Yi Cho , Li-Min Hung , Yao-Te Huang
Abstract: An embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.
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