- 专利标题： Method of making high critical temperature metal nitride layer
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申请号： US17178188申请日： 2021-02-17
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公开(公告)号： US11678589B2公开(公告)日： 2023-06-13
- 发明人: Zihao Yang , Mingwei Zhu , Shriram Mangipudi , Mohammad Kamruzzaman Chowdhury , Shane Lavan , Zhebo Chen , Yong Cao , Nag B. Patibandla
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Fish & Richardson P.C.
- 主分类号： H10N60/01
- IPC分类号： H10N60/01 ; H01L39/24
摘要：
A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
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