Invention Grant
- Patent Title: Memory device and method reading data
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Application No.: US17090726Application Date: 2020-11-05
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Publication No.: US11681458B2Publication Date: 2023-06-20
- Inventor: Sunghye Cho , Kijun Lee , Sung-Rae Kim , Chanki Kim , Yeonggeol Song , Yesin Ryu , Jaeyoun Youn , Myungkyu Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR 20200050991 2020.04.27
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F3/06 ; G06F11/10 ; G11C29/52

Abstract:
A method for reading data from a memory includes; reading a codeword from the memory cells, correcting the errors when a number of errors in the codeword is less than a maximum number of correctable errors, correcting the errors when the number of errors in the codeword is equal to the maximum number of correctable errors and the errors correspond to a same sub-word line, and outputting signal indicating that the errors are an uncorrectable error when the number of errors of the codeword is equal to the maximum number of correctable errors and the errors correspond to different sub-word lines.
Public/Granted literature
- US20210334033A1 MEMORY DEVICE AND METHOD READING DATA Public/Granted day:2021-10-28
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