Invention Grant
- Patent Title: Hybrid metal line structure
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Application No.: US17212113Application Date: 2021-03-25
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Publication No.: US11682618B2Publication Date: 2023-06-20
- Inventor: Pokuan Ho , Chia-Tien Wu , Hsin-Ping Chen , Wei-Chen Chu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L23/528

Abstract:
The present disclosure relates to an integrated chip that includes a substrate, a first metal line, and a hybrid metal line. The first metal line includes a first metal material and is within a first interlayer dielectric (ILD) layer over the substrate. The hybrid metal line is also within the first ILD layer. The hybrid metal line includes a pair of first metal segments that comprise the first metal material. The hybrid metal line further includes a second metal segment that comprises a second metal material that is different from the first metal material. The second metal segment is laterally between the pair of first metal segments.
Public/Granted literature
- US20220310508A1 HYBRID METAL LINE STRUCTURE Public/Granted day:2022-09-29
Information query
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