Invention Grant
- Patent Title: Local shape deviation in a semiconductor specimen
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Application No.: US17465753Application Date: 2021-09-02
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Publication No.: US11686571B2Publication Date: 2023-06-27
- Inventor: Roman Kris , Ilan Ben-Harush , Rafael Bistritzer , Vadim Vereschagin , Elad Sommer , Grigory Klebanov , Arundeepth Thamarassery , Jannelle Anna Geva , Gal Daniel Gutterman , Einat Frishman , Sahar Levin
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G01B11/24
- IPC: G01B11/24 ; G01B9/02 ; G06T7/00

Abstract:
There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.
Public/Granted literature
- US20230069303A1 LOCAL SHAPE DEVIATION IN A SEMICONDUCTOR SPECIMEN Public/Granted day:2023-03-02
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