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Patent Agency Ranking
公开(公告)号：US11651509B2
公开(公告)日：2023-05-16
申请号：US17281948
申请日：2019-10-31
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor： Roman Kris , Roi Meir , Sahar Levin , Ishai Schwarzband , Grigory Klebanov , Shimon Levi , Efrat Noifeld , Hiroshi Miroku , Taku Yoshizawa , Kasturi Saha , Sharon Duvdevani-Bar , Vadim Vereschagin
CPC classification number: G06T7/0004 , G01N23/225 , G06T7/13 , G06T7/194 , G06T7/60 , G06V10/44 , G06V20/695 , G01N2223/401 , G06T2207/10061 , G06T2207/30148
Abstract: A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.
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公开(公告)号：US11686571B2
公开(公告)日：2023-06-27
申请号：US17465753
申请日：2021-09-02
Applicant: Applied Materials Israel Ltd.
Inventor： Roman Kris , Ilan Ben-Harush , Rafael Bistritzer , Vadim Vereschagin , Elad Sommer , Grigory Klebanov , Arundeepth Thamarassery , Jannelle Anna Geva , Gal Daniel Gutterman , Einat Frishman , Sahar Levin
CPC classification number: G01B9/02043 , G01B9/02084 , G01B11/24 , G06T7/001 , G06T2207/30148
Abstract: There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.
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公开(公告)号：US11443420B2
公开(公告)日：2022-09-13
申请号：US17135939
申请日：2020-12-28
Applicant: Applied Materials Israel Ltd.
Inventor： Roman Kris , Grigory Klebanov , Einat Frishman , Tal Orenstein , Meir Vengrover , Noa Marom , Ilan Ben-Harush , Rafael Bistritzer , Sharon Duvdevani-Bar
Abstract: There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.
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公开(公告)号：US11056404B1
公开(公告)日：2021-07-06
申请号：US16719856
申请日：2019-12-18
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor： Roman Kris , Grigory Klebanov , Dhananjay Singh Rathore , Einat Frishman , Sharon Duvdevani-Bar , Assaf Shamir , Elad Sommer , Jannelle Anna Geva , Daniel Alan Rogers , Ido Friedler , Avi Aviad Ben Simhon
Abstract: An evaluation system that may include an imager; and a processing circuit. The imager may be configured to obtain an electron image of a hole that is formed by an etch process, the hole exposes at least one layer of a one or more sets of layers, each set of layers comprises layers that differ from each other by their electron yield and belong to an intermediate product. The processing circuit may be configured to evaluate, based on the electron image, whether the hole ended at a target layer of the intermediate product. The intermediate product is manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit. The hole may exhibit a high aspect ratio, and has a width of a nanometric scale.
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公开(公告)号：US20210193536A1
公开(公告)日：2021-06-24
申请号：US16719856
申请日：2019-12-18
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor： Roman Kris , Grigory Klebanov , Dhananjay Singh Rathore , Einat Frishman , Sharon Duvdevani-Bar , Assaf Shamir , Elad Sommer , Jannelle Anna Geva , Daniel Alan Rogers , Ido Friedler , Avi Aviad Ben Simhon
Abstract: An evaluation system that may include an imager; and a processing circuit. The imager may be configured to obtain an electron image of a hole that is formed by an etch process, the hole exposes at least one layer of a one or more sets of layers, each set of layers comprises layers that differ from each other by their electron yield and belong to an intermediate product. The processing circuit may be configured to evaluate, based on the electron image, whether the hole ended at a target layer of the intermediate product. The intermediate product is manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit. The hole may exhibit a high aspect ratio, and has a width of a nanometric scale.
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