Invention Grant
- Patent Title: Retention voltage management for a volatile memory
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Application No.: US17402915Application Date: 2021-08-16
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Publication No.: US11688486B2Publication Date: 2023-06-27
- Inventor: Shahzad Nazar , Mohamed H. Abu-Rahma , Amrinder S. Barn
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Kowert, Hood, Munyon, Rankin & Goetzel, P.C.
- Agent Scott W. Pape; Dean M. Munyon
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C29/50 ; G11C11/419 ; G11C29/12 ; G11C11/409

Abstract:
An apparatus includes a memory circuit that includes a plurality of sub-arrays. The memory circuit is configured to implement a retention mode according to test information indicating voltage sensitivities for the plurality of sub-arrays. The apparatus also includes a voltage control circuit coupled to a power supply node. The voltage control circuit is configured, in response to activation of the retention mode for the plurality of sub-arrays, to generate, based on the test information, at least two different retention voltage levels for different ones of the plurality of sub-arrays. The at least two different retention voltage levels are lower than a power supply voltage level of the power supply node.
Public/Granted literature
- US20220028479A1 Retention Voltage Management for a Volatile Memory Public/Granted day:2022-01-27
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