Invention Grant
- Patent Title: Semiconductor device with treated interfacial layer on silicon germanium
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Application No.: US17338426Application Date: 2021-06-03
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Publication No.: US11688812B2Publication Date: 2023-06-27
- Inventor: Chih-Yu Chang , Hsiang-Pi Chang , Zi-Wei Fang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/28 ; H01L21/265 ; H01L21/324 ; H01L29/66 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L29/49
Abstract:
A method includes following steps. A silicon germanium layer is formed on a substrate. A surface layer of the silicon germanium layer is oxidized to form an interfacial layer comprising silicon oxide and germanium oxide. The interfacial layer is nitridated. A metal gate structure is formed over the nitridated interfacial layer.
Public/Granted literature
- US20210296507A1 SEMICONDUCTOR DEVICE WITH TREATED INTERFACIAL LAYER ON SILICON GERMANIUM Public/Granted day:2021-09-23
Information query
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