Invention Grant
- Patent Title: 24 to 30GHz wide band CMOS power amplifier with turn-off mode high impedance
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Application No.: US17111337Application Date: 2020-12-03
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Publication No.: US11689162B2Publication Date: 2023-06-27
- Inventor: Che-Chun Kuo , Siu-Chuang Ivan Lu , Sang Won Son , Xiaohua Yu
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H03F1/56
- IPC: H03F1/56 ; H03F3/24 ; H04B1/04

Abstract:
A wide band matching network for power amplifier impedance matching, the wide band matching network comprising: a power amplifier transistor connected to an output network; the output network including: a series capacitor; an on-chip transformer connected to the capacitor in series, wherein the transformer and the capacitor act as a second order filter; and a port connected to the capacitor and a receiver switch.
Public/Granted literature
- US20220060155A1 24 TO 30GHZ WIDE BAND CMOS POWER AMPLIFIER WITH TURN-OFF MODE HIGH IMPEDANCE Public/Granted day:2022-02-24
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