Invention Grant
- Patent Title: Light-emitting device
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Application No.: US17067148Application Date: 2020-10-09
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Publication No.: US11690243B2Publication Date: 2023-06-27
- Inventor: Masataka Nakada , Takayuki Abe , Naoyuki Senda
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP 14043742 2014.03.06
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L51/00 ; H01L27/32

Abstract:
A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.
Public/Granted literature
- US20210028392A1 LIGHT-EMITTING DEVICE Public/Granted day:2021-01-28
Information query
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