Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17205414Application Date: 2021-03-18
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Publication No.: US11690279B2Publication Date: 2023-06-27
- Inventor: Nobuto Managaki
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP 20066472 2020.04.02
- Main IPC: H10K77/10
- IPC: H10K77/10 ; B32B27/08 ; B32B27/28 ; H10K59/12 ; H10K71/00 ; H10K102/00

Abstract:
A semiconductor device includes: a resin substrate; a display element configured to generate an image; and a circuit layer including a thin film transistor configured to control the display element. The resin substrate has a main body made of resin and a surface layer made of the resin laminated on the main body. The surface layer has a lower electrification property than the main body or the surface layer has a lower film density than the main body. Each of the display element and the circuit layer is on the surface layer.
Public/Granted literature
- US20210313525A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-10-07
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