Invention Grant
- Patent Title: Wafer level uniformity control in remote plasma film deposition
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Application No.: US15449333Application Date: 2017-03-03
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Publication No.: US11702748B2Publication Date: 2023-07-18
- Inventor: Geoffrey Hohn , Huatan Qiu , Rachel Batzer , Guangbi Yuan , Zhe Gui
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: C23C16/458
- IPC: C23C16/458 ; H01L21/687 ; C23C16/505

Abstract:
An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.
Public/Granted literature
- US20180251893A1 WAFER LEVEL UNIFORMITY CONTROL IN REMOTE PLASMA FILM DEPOSITION Public/Granted day:2018-09-06
Information query
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