公开(公告)号：US11920239B2

公开(公告)日：2024-03-05

申请号：US17649020

申请日：2022-01-26

Applicant: Lam Research Corporation

Inventor： Bhadri N. Varadarajan ,  Bo Gong ,  Rachel E. Batzer ,  Huatan Qiu ,  Bart J. Van Schravendijk ,  Geoffrey Hohn

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  C23C16/458 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32

CPC classification number: C23C16/45525 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/32486

Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates. The apparatus may be configured to cause formation and reconditioning of the low recombination material coating.

公开(公告)号：US11557460B2

公开(公告)日：2023-01-17

申请号：US17258584

申请日：2019-07-08

Applicant: LAM RESEARCH CORPORATION

Inventor： Eller Y. Juco ,  Karl Frederick Leeser ,  Huatan Qiu

IPC: H01J37/32

Abstract: A multi-signal radio frequency (RF) source includes an RF source; and a switch including an input in communication with an output of the RF source, a first output and a second output. The switch is configured to selectively connect the input to one of the first output and the second output. An RF generator in communication with the first output of the multi-signal RF source is configured to generate plasma in a processing chamber. A remote plasma generator in communication with the second output of the multi-signal RF source is configured to supply remote plasma to the processing chamber.

公开(公告)号：US20200347497A1

公开(公告)日：2020-11-05

申请号：US16935760

申请日：2020-07-22

Applicant: Lam Research Corporation

Inventor： Damodar Shanbhag ,  Guangbi Yuan ,  Thadeous Bamford ,  Curtis Warren Bailey ,  Tony Kaushal ,  Krishna Birru ,  William Schlosser ,  Bo Gong ,  Huatan Qiu ,  Fengyuan Lai ,  Leonard Wai Fung Kho ,  Anand Chandrashekar ,  Andrew H. Breninger ,  Chen-Hua Hsu ,  Geoffrey Hohn ,  Gang Liu ,  Rohit Khare

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/40

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

公开(公告)号：US11608559B2

公开(公告)日：2023-03-21

申请号：US17401261

申请日：2021-08-12

Applicant: Lam Research Corporation

Inventor： Rachel Batzer ,  Huatan Qiu ,  Bhadri Varadarajan ,  Patrick Girard Breiling ,  Bo Gong ,  Will Schlosser ,  Zhe Gui ,  Taide Tan ,  Geoffrey Hohn

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  H01L21/67 ,  H01L21/687 ,  B05C13/02 ,  C23C16/458

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US20210371982A1

公开(公告)日：2021-12-02

申请号：US17401261

申请日：2021-08-12

Applicant: Lam Research Corporation

Inventor： Rachel BATZER ,  Huatan Qiu ,  Bhadri Varadarajan ,  Patrick Girard Breiling ,  Bo Gong ,  Will Schlosser ,  Zhe Gui ,  Taide Tan ,  Geoffrey Hohn

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US12000047B2

公开(公告)日：2024-06-04

申请号：US18163828

申请日：2023-02-02

Applicant: Lam Research Corporation

Inventor： Rachel E. Batzer ,  Huatan Qiu ,  Bhadri N. Varadarajan ,  Patrick Girard Breiling ,  Bo Gong ,  Will Schlosser ,  Zhe Gui ,  Taide Tan ,  Geoffrey Hohn

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  H01L21/67 ,  H01L21/687 ,  B05C13/02 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785 ,  B05C13/02 ,  C23C16/4581 ,  C23C16/4583 ,  H01J37/32642 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6715

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US10604841B2

公开(公告)日：2020-03-31

申请号：US15378854

申请日：2016-12-14

Applicant: Lam Research Corporation

Inventor： Rachel Batzer ,  Huatan Qiu ,  Bhadri Varadarajan ,  Patrick Girard Breiling ,  Bo Gong ,  Will Schlosser ,  Zhe Gui ,  Taide Tan ,  Geoffrey Hohn

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum including an inlet to receive heat transfer fluid and a plurality of flow channels to direct the heat transfer fluid through a center portion of the showerhead to an outlet to control a temperature of the showerhead, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US20190185999A1

公开(公告)日：2019-06-20

申请号：US15954454

申请日：2018-04-16

Applicant: Lam Research Corporation

Inventor： Damodar Shanbhag ,  Guangbi Yuan ,  Thadeous Bamford ,  Curtis Warren Bailey ,  Tony Kaushal ,  Krishna Birru ,  William Schlosser ,  Bo Gong ,  Huatan Qiu ,  Fengyuan Lai ,  Leonard Wai Fung Kho ,  Anand Chandrashekar ,  Andrew H. Breninger ,  Chen-Hua Hsu ,  Geoffrey Hohn ,  Gang Liu ,  Rohit Khare

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/40 ,  H01J37/32

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

公开(公告)号：US12163219B2

公开(公告)日：2024-12-10

申请号：US17930397

申请日：2022-09-07

Applicant: Lam Research Corporation

Inventor： Damodar Rajaram Shanbhag ,  Guangbi Yuan ,  Thadeous Bamford ,  Curtis Warren Bailey ,  Tony Kaushal ,  Krishna Birru ,  William Schlosser ,  Bo Gong ,  Huatan Qiu ,  Fengyuan Lai ,  Leonard Wai Fung Kho ,  Anand Chandrashekar ,  Andrew H. Breninger ,  Chen-Hua Hsu ,  Geoffrey Hohn ,  Gang Liu ,  Rohit Khare

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

公开(公告)号：US20240318312A1

公开(公告)日：2024-09-26

申请号：US18679771

申请日：2024-05-31

Applicant: Lam Research Corporation

Inventor： Rachel E. Batzer ,  Huatan Qiu ,  Bhadri N. Varadarajan ,  Patrick Girard Breiling ,  Bo Gong ,  Will Schlosser ,  Zhe Gui ,  Taide Tan ,  Geoffrey Hohn

IPC: C23C16/455 ,  B05C13/02 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785 ,  B05C13/02 ,  C23C16/4581 ,  C23C16/4583 ,  H01J37/32642 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6715

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.