Invention Grant
- Patent Title: Photoresist composition and method of manufacturing a semiconductor device
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Application No.: US17150317Application Date: 2021-01-15
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Publication No.: US11703765B2Publication Date: 2023-07-18
- Inventor: Tzu-Yang Lin , Ching-Yu Chang , Chin-Hsiang Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G03F7/30
- IPC: G03F7/30 ; G03F7/36 ; G03F7/038 ; G03F7/039 ; G03F7/38 ; G03F7/40 ; G03F7/20 ; G03F7/32 ; G03F7/004 ; B82Y40/00 ; B82Y30/00
Abstract:
A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from:
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.
Public/Granted literature
- US20210311393A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2021-10-07
Information query
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