Invention Grant
- Patent Title: Memory wordline isolation for improvement in reliability, availability, and scalability (RAS)
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Application No.: US17530086Application Date: 2021-11-18
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Publication No.: US11704194B2Publication Date: 2023-07-18
- Inventor: Kuljit S. Bains
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law PC
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/10 ; G06F13/16

Abstract:
A memory device that performs internal ECC (error checking and correction) can treat an N-bit channel as two N/2-bit channels for application of ECC. The memory device includes a memory array to store data and prefetches data bits and error checking and correction (ECC) bits from the memory array for a memory access operation. The memory device includes internal ECC hardware to apply ECC, with a first group of a first half the data bits checked by a first half of the ECC bits in parallel with a second group of a second half of the data bits checked by a second half of the ECC bits.
Public/Granted literature
- US20220075689A1 MEMORY WORDLINE ISOLATION FOR IMPROVEMENT IN RELIABILITY, AVAILABILITY, AND SCALABILITY (RAS) Public/Granted day:2022-03-10
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