- 专利标题: Semiconductor memory devices and methods of manufacturing thereof
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申请号: US17470854申请日: 2021-09-09
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公开(公告)号: US11705177B2公开(公告)日: 2023-07-18
- 发明人: Peng-Chun Liou , Zhiqiang Wu , Chung-Wei Wu , Yi-Ching Liu , Yih Wang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Foley & Lardner LLP
- 主分类号: G11C11/22
- IPC分类号: G11C11/22 ; H10B51/20
摘要:
A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures are configured to be applied with respective different voltages in accordance with the varying width of the first and second conductive structures.
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