-
公开(公告)号：US20220293158A1
公开(公告)日：2022-09-15
申请号：US17470854
申请日：2021-09-09
发明人： Peng-Chun Liou , Zhiqiang Wu , Chung-Wei Wu , Yi-Ching Liu , Yih Wang
IPC分类号： G11C11/22 , H01L27/11597
摘要： A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures are configured to be applied with respective different voltages in accordance with the varying width of the first and second conductive structures.
-
公开(公告)号：US20240341075A1
公开(公告)日：2024-10-10
申请号：US18296010
申请日：2023-04-05
发明人： Peng-Chun Liou , Ya-Yun Cheng , Chia-En Huang , Yi-Ching Liu , Zhiqiang Wu , Yih Wang
IPC分类号： H10B12/00
CPC分类号： H10B12/00
摘要： A semiconductor device includes a conductive layer extending along a first lateral direction; a gate dielectric layer disposed over the conductive layer; a channel layer disposed over the gate dielectric layer and extending along a second lateral direction perpendicular to the first lateral direction; a first via-like structure, in direct contact with the channel layer, that is disposed along a first edge of the first channel extending along the second lateral direction; and a second via-like structure, in direct contact with the channel layer, that is disposed along a second, opposite edge of the first channel extending along the second lateral direction. The first via-like structure and second via-like structure are laterally separated apart along a third lateral direction that is clockwise tilted from the second lateral direction with a first positive angle.
-
公开(公告)号：US20240023338A1
公开(公告)日：2024-01-18
申请号：US18361270
申请日：2023-07-28
发明人： Peng-Chun Liou , Zhiqiang Wu , Ya-Yun Cheng , Yi-Ching Liu , Meng-Han Lin
摘要： A semiconductor device includes a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a first lateral direction. The semiconductor device includes third conductive structures each extending along the first lateral direction. The third conductive structures are disposed across the first and second conductive structures. The semiconductor device includes a first semiconductor channel extending along the vertical direction. The first semiconductor channel is disposed between the third conductive structures and the first conductive structure, and between the third conductive structures and the second conductive structure. The first and second conductive structures each have a first varying width along the first lateral direction, and the first semiconductor channel has a second varying width along a second lateral direction.
-
公开(公告)号：US11758734B2
公开(公告)日：2023-09-12
申请号：US17458692
申请日：2021-08-27
发明人： Peng-Chun Liou , Zhiqiang Wu , Ya-Yun Cheng , Yi-Ching Liu , Meng-Han Lin
摘要： A semiconductor device includes a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a first lateral direction. The semiconductor device includes third conductive structures each extending along the first lateral direction. The third conductive structures are disposed across the first and second conductive structures. The semiconductor device includes a first semiconductor channel extending along the vertical direction. The first semiconductor channel is disposed between the third conductive structures and the first conductive structure, and between the third conductive structures and the second conductive structure. The first and second conductive structures each have a first varying width along the first lateral direction, and the first semiconductor channel has a second varying width along a second lateral direction.
-
公开(公告)号：US20230225130A1
公开(公告)日：2023-07-13
申请号：US17572623
申请日：2022-01-10
发明人： Peng-Chun Liou , Zhiqiang Wu , Chung-Wei Wu , Ya-Yun Cheng
IPC分类号： H01L27/11597 , H01L27/11587
CPC分类号： H01L27/11597 , H01L27/11587
摘要： A ferroelectric memory device includes a multi-layer stack, a ferroelectric layer, and channel layers. The multi-layer stack is disposed on a substrate and includes conductive layers and dielectric layers stacked alternately. The ferroelectric layer has a curvy profile and is disposed along sidewalls of the conducive layers and sidewalls of the dielectric layers. The channel layers are separated from each other and disposed on the ferroelectric layer, and correspond to the conductive layers respectively.
-
公开(公告)号：US11856783B2
公开(公告)日：2023-12-26
申请号：US17458237
申请日：2021-08-26
发明人： Peng-Chun Liou , Ya-Yun Cheng , Yi-Ching Liu , Meng-Han Lin , Chia-En Huang
摘要： A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures have respective different thicknesses in accordance with the varying width of the first and second conductive structures.
-
公开(公告)号：US20230403859A1
公开(公告)日：2023-12-14
申请号：US18446043
申请日：2023-08-08
发明人： Peng-Chun Liou , Ya-Yun Cheng , Yi-Ching Liu , Meng-Han Lin , Chia-En Huang
摘要： A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures have respective different thicknesses in accordance with the varying width of the first and second conductive structures.
-
公开(公告)号：US11705177B2
公开(公告)日：2023-07-18
申请号：US17470854
申请日：2021-09-09
发明人： Peng-Chun Liou , Zhiqiang Wu , Chung-Wei Wu , Yi-Ching Liu , Yih Wang
CPC分类号： G11C11/2257 , G11C11/2255 , G11C11/2297 , H10B51/20
摘要： A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures are configured to be applied with respective different voltages in accordance with the varying width of the first and second conductive structures.
-
公开(公告)号：US20220285397A1
公开(公告)日：2022-09-08
申请号：US17458237
申请日：2021-08-26
发明人： Peng-Chun Liou , Ya-Yun Cheng , Yi-Ching Liu , Meng-Han Lin , Chia-En Huang
IPC分类号： H01L27/11597 , H01L27/1159
摘要： A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures have respective different thicknesses in accordance with the varying width of the first and second conductive structures.
-
公开(公告)号：US12029042B2
公开(公告)日：2024-07-02
申请号：US17470826
申请日：2021-09-09
发明人： Peng-Chun Liou , Zhiqiang Wu , Chung-Wei Wu , Yi-Ching Liu , Chia-En Huang
IPC分类号： H10B51/20 , H01L21/768 , H01L23/522 , H01L23/528 , H01L29/10
CPC分类号： H10B51/20 , H01L21/76804 , H01L21/76877 , H01L23/5226 , H01L23/5283 , H01L29/105
摘要： A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structuring extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The semiconductor device further comprises a first semiconductor channel extending along the vertical direction. The first semiconductor channel is disposed between the plurality of third conductive structures and the first conductive structure and between the plurality of third conductive structures and the second conductive structure. The first and second conductive structures each have a varying width along the lateral direction, and the first semiconductor channel has a doping concentration varying along the vertical direction.
-
-
-
-
-
-
-
-
-
搜索结果
14 条记录 (耗时 0.023 秒)
