Invention Grant
- Patent Title: Fully aligned via integration with selective catalyzed vapor phase grown materials
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Application No.: US17326973Application Date: 2021-05-21
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Publication No.: US11705363B2Publication Date: 2023-07-18
- Inventor: Ming He , Harsono Simka , Rebecca Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: The Farrell Law Firm, P.C.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522
Abstract:
A method and electronic device are provided. The method includes patterning a metal in a first dielectric layer, depositing a first metal layer over the patterned metal, forming a nanowall under the first metal layer such that the nanowall is in contact with the patterned metal in the first dielectric layer, depositing a second dielectric layer on the first dielectric layer, removing at least a portion of the nanowall, thereby forming a channel in the second dielectric layer, and depositing a metal via in the channel such that the metal via is in contact with the patterned metal in the first dielectric layer.
Public/Granted literature
- US20220301924A1 FULLY ALIGNED VIA INTEGRATION WITH SELECTIVE CATALYZED VAPOR PHASE GROWN MATERIALS Public/Granted day:2022-09-22
Information query
IPC分类:
