Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17380653Application Date: 2021-07-20
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Publication No.: US11705433B2Publication Date: 2023-07-18
- Inventor: Yasutaka Nakashiba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/522 ; H01L23/00

Abstract:
A semiconductor device includes a first semiconductor chip, an adhesive layer that is formed on the first semiconductor chip, and a second semiconductor chip that is arranged on the first semiconductor chip via the adhesive layer. The first semiconductor chip has a first semiconductor substrate and a first wiring layer. The first wiring layer has a first inductor and a first electrode pad. The first wiring layer is formed on the first semiconductor substrate. The second semiconductor chip has a second wiring layer and a second semiconductor substrate. The second wiring layer is formed on the first wiring layer via the adhesive layer. The second semiconductor substrate is formed on the second wiring layer, and has a first opening. In a plan view, the first electrode pad is formed so as not to overlap with the second semiconductor chip, and a second electrode pad overlaps with the first opening.
Public/Granted literature
- US20230023018A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-01-26
Information query
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