Invention Grant
- Patent Title: Image sensor including light shielding layer and patterned dielectric layer
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Application No.: US17493752Application Date: 2021-10-04
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Publication No.: US11706525B2Publication Date: 2023-07-18
- Inventor: Yun-Wei Cheng , Chun-Hao Chou , Hsin-Chi Chen , Kuo-Cheng Lee , Hsun-Ying Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H04N5/232
- IPC: H04N5/232 ; H04N23/67 ; H01L27/146 ; H04N23/10 ; H04N25/133 ; H04N25/13 ; H04N25/702 ; H04N25/704 ; H04N5/369

Abstract:
An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.
Public/Granted literature
- US20220030158A1 IMAGE SENSOR INCLUDING LIGHT SHIELDING LAYER AND PATTERNED DIELECTRIC LAYER Public/Granted day:2022-01-27
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