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公开(公告)号：US12081866B2
公开(公告)日：2024-09-03
申请号：US18327825
申请日：2023-06-01
发明人： Yun-Wei Cheng , Chun-Hao Chou , Hsin-Chi Chen , Kuo-Cheng Lee , Hsun-Ying Huang
IPC分类号： H04N5/232 , H01L27/146 , H04N23/10 , H04N23/67 , H04N25/13 , H04N25/133 , H04N25/702 , H04N25/704 , H04N5/369
CPC分类号： H04N23/67 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14689 , H04N23/10 , H04N25/133 , H04N25/134 , H04N25/702 , H04N25/704
摘要： An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.
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公开(公告)号：US20240063234A1
公开(公告)日：2024-02-22
申请号：US18500357
申请日：2023-11-02
发明人： Chia-Yu Wei , Hsin-Chi Chen , Kuo-Cheng Lee , Ping-Hao Lin , Hsun-Ying Huang , Yen-Liang Lin , Yu Ting Kao
IPC分类号： H01L27/146
CPC分类号： H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14621 , H01L27/1463 , H01L27/14636 , H01L27/14641 , H01L27/14689 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14647 , H01L27/14687 , H01L27/14638 , H01L29/7827
摘要： The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.
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公开(公告)号：US11756913B2
公开(公告)日：2023-09-12
申请号：US17841213
申请日：2022-06-15
发明人： Hsin-Chi Chen , Hsun-Ying Huang , Chih-Ming Lee , Shang-Yen Wu , Chih-An Yang , Hung-Wei Ho , Chao-Ching Chang , Tsung-Wei Huang
IPC分类号： H01L21/00 , H01L23/00 , H01L21/768 , H01L23/488
CPC分类号： H01L24/14 , H01L21/76802 , H01L21/76877 , H01L23/488 , H01L2224/0401 , H01L2224/13
摘要： A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.
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公开(公告)号：US11706525B2
公开(公告)日：2023-07-18
申请号：US17493752
申请日：2021-10-04
发明人： Yun-Wei Cheng , Chun-Hao Chou , Hsin-Chi Chen , Kuo-Cheng Lee , Hsun-Ying Huang
IPC分类号： H04N5/232 , H04N23/67 , H01L27/146 , H04N23/10 , H04N25/133 , H04N25/13 , H04N25/702 , H04N25/704 , H04N5/369
CPC分类号： H04N23/67 , H01L27/1463 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14689 , H04N23/10 , H04N25/133 , H04N25/134 , H04N25/702 , H04N25/704
摘要： An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.
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公开(公告)号：US09123616B2
公开(公告)日：2015-09-01
申请号：US14323676
申请日：2014-07-03
发明人： Shou-Shu Lu , Hsun-Ying Huang , Hsin-Jung Huang , Chun-Mao Chiu , Chia-Chi Hsiao , Yung-Cheng Chang
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L27/14618 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L31/028 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.
摘要翻译： 公开了制造半导体图像传感器装置的方法。 在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 通过蚀刻划线区域中的基板，在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 然后将开口用有机材料填充。
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公开(公告)号：US12010826B2
公开(公告)日：2024-06-11
申请号：US18184036
申请日：2023-03-15
发明人： You Che Chuang , Chih-Ming Lee , Hsin-Chi Chen , Hsun-Ying Huang
摘要： A semiconductor structure includes a first transistor comprising a first gate structure over a first active region in a substrate. The semiconductor structure further includes a second active region in the substrate. The semiconductor structure further includes a first butted contact. The first butted contact includes a first portion extending in a first direction and overlapping the second active region, and a second portion extending from the first portion, wherein the second portion directly contacts each of a top surface and a sidewall of the first gate structure.
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公开(公告)号：US11784198B2
公开(公告)日：2023-10-10
申请号：US17830707
申请日：2022-06-02
发明人： Chia-Yu Wei , Fu-Cheng Chang , Hsin-Chi Chen , Ching-Hung Kao , Chia-Pin Cheng , Kuo-Cheng Lee , Hsun-Ying Huang , Yen-Liang Lin
IPC分类号： H01L29/06 , H01L27/146 , H01L29/423 , H01L29/78
CPC分类号： H01L27/14614 , H01L27/14643 , H01L29/0653 , H01L29/4236 , H01L29/42376 , H01L29/78 , H01L29/7853
摘要： A semiconductor device includes a plurality of isolation structures, wherein each isolation structure of the plurality of isolation structures is spaced from an adjacent isolation structure of the plurality of isolation structures in a first direction. The semiconductor device further includes a gate structure. The gate structure includes a top surface; a first sidewall angled at a non-perpendicular angle with respect to the top surface; and a second sidewall angled with respect to the top surface. The gate structure further includes a first horizontal surface extending between the first sidewall and the second sidewall, wherein the first horizontal surface is parallel to the top surface, and a dimension of the gate structure in a second direction, perpendicular to the first direction, is less than a dimension of each of the plurality of isolation structures in the second direction.
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公开(公告)号：US10861859B2
公开(公告)日：2020-12-08
申请号：US16395703
申请日：2019-04-26
发明人： You Che Chuang , Chih-Ming Lee , Hsin-Chi Chen , Hsun-Ying Huang
摘要： A semiconductor structure includes a first transistor including a first gate structure over a first active region in a substrate, a second transistor including a second gate structure over a second active region in the substrate, and a butted contact electrically connecting the second active region of the second transistor to the first gate structure of the first transistor. The butted contact includes a first portion extending along a first direction and overlapping at least the second active region, and a second portion extending along a second direction different from the first direction and intersecting the first portion. The second portion extends over the first gate structure.
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公开(公告)号：US09543355B2
公开(公告)日：2017-01-10
申请号：US14822051
申请日：2015-08-10
发明人： Shou-Shu Lu , Hsun-Ying Huang , Hsin-Jung Huang , Chun-Mao Chiu , Chia-Chi Hsiao , Yung-Cheng Chang
IPC分类号： H01L27/146 , H01L31/028
CPC分类号： H01L27/14687 , H01L27/14618 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L31/028 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.
摘要翻译： 公开了制造半导体图像传感器装置的方法。 在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 通过蚀刻划线区域中的基板，在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 然后将开口用有机材料填充。
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公开(公告)号：US08980674B2
公开(公告)日：2015-03-17
申请号：US14225509
申请日：2014-03-26
发明人： Wei-Chih Weng , Hsun-Ying Huang , Yung-Cheng Chang , Jin-Hong Cho
IPC分类号： H01L21/00 , H01L31/102
CPC分类号： H01L27/14623 , H01L27/1462 , H01L27/14636 , H01L27/1464 , H01L27/14685
摘要： Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.
摘要翻译： 提供了一种半导体图像传感器装置。 图像传感器装置包括具有阵列区域和黑色电平校正区域的半导体衬底。 阵列区域包含多个辐射敏感像素。 黑色电平校正区域包含一个或多个参考像素。 基板具有前侧和后侧。 图像传感器装置包括形成在基板的背面上的第一压缩应力层。 第一压应力层含有氮化硅。 图像传感器装置包括形成在压缩应力层上的金属屏蔽。 金属屏蔽形成在黑色电平校正区域的至少一部分上。 图像传感器装置包括形成在金属屏蔽和第一压缩应力层上的第二压缩应力层。 第二压应力层含有氧化硅。 金属屏蔽的侧壁由第二压应力层保护。
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