Invention Grant
- Patent Title: Semiconductor memory device and fabrication method thereof
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Application No.: US17224140Application Date: 2021-04-07
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Publication No.: US11706933B2Publication Date: 2023-07-18
- Inventor: Wen-Hsin Hsu , Ko-Chi Chen , Tzu-Yun Chang , Chung-Tse Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW 0108735 2021.03.11
- Main IPC: H10B63/00
- IPC: H10B63/00 ; H10N70/20 ; H10N70/00

Abstract:
A semiconductor memory device includes a substrate, a dielectric layer on the substrate, and a contact plug in the dielectric layer. An upper portion of the contact plug protrudes from a top surface of the dielectric layer. The upper portion of the contact plug acts as a first electrode. A buffer layer is disposed on the dielectric layer and beside the upper portion of the contact plug. A resistive-switching layer is disposed beside the buffer layer. A second electrode is disposed beside the resistive-switching layer.
Public/Granted literature
- US20220293679A1 SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2022-09-15
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