Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17165837Application Date: 2021-02-02
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Publication No.: US11706995B2Publication Date: 2023-07-18
- Inventor: Chih-Wei Kuo , Chia-Chang Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110011336.8 2021.01.06
- Main IPC: H10N50/80
- IPC: H10N50/80 ; H01L27/02 ; H10B61/00

Abstract:
A semiconductor device includes an array region defined on a substrate, a ring of dummy pattern surrounding the array region, and a gap between the array region and the ring of dummy pattern. Preferably, the ring of dummy pattern further includes a ring of magnetic tunneling junction (MTJ) pattern surrounding the array region and a ring of metal interconnect pattern overlapping the ring of MTJ and surrounding the array region.
Public/Granted literature
- US20220216395A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-07-07
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