Invention Grant
- Patent Title: Method for producing a graphene film
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Application No.: US16062301Application Date: 2016-12-09
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Publication No.: US11708271B2Publication Date: 2023-07-25
- Inventor: Hui Bi , Fuqiang Huang , Xinyuan Liu , Zhen Song , Yufeng Tang , Tongping Xiu
- Applicant: Corning Incorporated , Shanghai Institute of Ceramics (SICCAS)
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated,Shanghai Institute of Ceramics, Chinese Academy of Sciences
- Current Assignee: Corning Incorporated,Shanghai Institute of Ceramics, Chinese Academy of Sciences
- Current Assignee Address: US NY Corning; CN Shanghai
- Agent Svetlana Z. Short
- International Application: PCT/US2016/065798 2016.12.09
- International Announcement: WO2017/106035A 2017.06.22
- Date entered country: 2018-06-14
- Main IPC: B32B9/00
- IPC: B32B9/00 ; C01B32/198 ; C23C16/26 ; C01B32/186 ; C01B32/182 ; C03C17/22 ; C23C16/50

Abstract:
Disclosed herein are methods for forming a graphene film on a substrate, the methods comprising depositing graphene on a surface of the substrate by a first vapor deposition step to form a discontinuous graphene crystal layer; depositing a graphene oxide layer on the discontinuous graphene crystal layer to form a composite layer; and depositing graphene on the composite layer by a second vapor deposition step, wherein the graphene oxide layer is substantially reduced to a graphene layer during the second vapor deposition step. Transparent coated substrates comprising such graphene films are also disclosed herein, wherein the graphene films have a resistance of less than about 10 KΩ/sq.
Public/Granted literature
- US20180362393A1 METHOD FOR PRODUCING A GRAPHENE FILM Public/Granted day:2018-12-20
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