Invention Grant
- Patent Title: Multi-stage memory device performance notification
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Application No.: US16997055Application Date: 2020-08-19
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Publication No.: US11709617B2Publication Date: 2023-07-25
- Inventor: Qing Liang , Mingke Yu , Deping He
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
Methods, systems, and devices for multi-stage memory device performance notification are described. A memory system may include a first set of memory cells of a first type associated with a first performance level and a second set of memory cells of a second type associated with a second performance level. The memory system may have an interface and a control circuit coupled with the first and second sets of memory cells. The control circuit may be configured to determine a first parameter associated with a transition between the first performance level and the second performance level. The control circuit may also be configured to store the first parameter in a first register based at least in part on determining the first parameter.
Public/Granted literature
- US20220057956A1 MULTI-STAGE MEMORY DEVICE PERFORMANCE NOTIFICATION Public/Granted day:2022-02-24
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