Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US17197056Application Date: 2021-03-10
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Publication No.: US11710778B2Publication Date: 2023-07-25
- Inventor: Chin-Hung Chen , Ssu-I Fu , Chih-Kai Hsu , Chia-Jung Hsu , Yu-Hsiang Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 1910180883.1 2019.03.11
- The original application number of the division: US16378584 2019.04.09
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/308 ; H01L29/78 ; H01L27/088 ; H01L27/06 ; H01L21/033 ; H01L21/8234 ; H01L21/84 ; H01L27/12 ; H01L21/8238
Abstract:
A method for fabricating semiconductor device includes: forming a first semiconductor layer and an insulating layer on a substrate; removing the insulating layer and the first semiconductor layer to form openings; forming a second semiconductor layer in the openings; and patterning the second semiconductor layer, the insulating layer, and the first semiconductor layer to form fin-shaped structures.
Public/Granted literature
- US20210193823A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-06-24
Information query
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