Invention Grant
- Patent Title: Semiconductor device and method of manufacture
-
Application No.: US17222225Application Date: 2021-04-05
-
Publication No.: US11715686B2Publication Date: 2023-08-01
- Inventor: Jiun Yi Wu , Chen-Hua Yu , Chien-Hsun Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L25/16 ; H01L23/528 ; H01L23/00 ; H01L21/768 ; H01L23/48

Abstract:
A method includes forming a redistribution structure on a carrier, attaching an integrated passive device on a first side of the redistribution structure, attaching an interconnect structure to the first side of the redistribution structure, the integrated passive device interposed between the redistribution structure and the interconnect structure, depositing an underfill material between the interconnect structure and the redistribution structure, and attaching a semiconductor device on a second side of the redistribution structure that is opposite the first side of the redistribution structure.
Public/Granted literature
- US20210225764A1 Semiconductor Device and Method of Manufacture Public/Granted day:2021-07-22
Information query
IPC分类: