公开(公告)号：US20240363366A1

公开(公告)日：2024-10-31

申请号：US18771181

申请日：2024-07-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chien-Hsun Chen ,  Yu-Min Liang ,  Yen-Ping Wang ,  Jiun Yi Wu ,  Chen-Hua Yu ,  Kai-Chiang Wu

IPC分类号： H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522

CPC分类号： H01L21/486 ,  H01L21/56 ,  H01L21/76898 ,  H01L23/3121 ,  H01L23/481 ,  H01L23/5226

摘要： Interconnect devices, packaged semiconductor devices and methods are disclosed herein that are directed towards embedding a local silicon interconnect (LSI) device and through substrate vias (TSVs) into system on integrated substrate (SoIS) technology with a compact package structure. The LSI device may be embedded into SoIS technology with through substrate via integration to provide die-to-die FL connection arrangement for super large integrated Fan-Out (InFO) for SBT technology in a SoIS device. Furthermore, the TSV connection layer may be formed using lithographic or photoresist-defined vias to provide eLSI P/G out to a ball-grid-array (BGA) connection interface.

公开(公告)号：US20240355762A1

公开(公告)日：2024-10-24

申请号：US18760817

申请日：2024-07-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jiun Yi Wu ,  Chen-Hua Yu

IPC分类号： H01L23/00 ,  H01L21/48 ,  H01L23/538

CPC分类号： H01L23/562 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/35121

摘要： A device includes a redistribution structure, including conductive features; dielectric layers; and an internal support within a first dielectric layer of the dielectric layers, wherein the internal support is free of passive and active devices; a first interconnect structure attached to a first side of the redistribution structure; a second interconnect structure attached to the first side of the redistribution structure, wherein the second interconnect structure is laterally adjacent the first interconnect structure, wherein the internal support laterally overlaps both the first interconnect structure and the second interconnect structure.

公开(公告)号：US12057410B2

公开(公告)日：2024-08-06

申请号：US18359684

申请日：2023-07-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jiun Yi Wu ,  Chen-Hua Yu

IPC分类号： H01L23/00 ,  H01L21/48 ,  H01L23/538

CPC分类号： H01L23/562 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/35121

摘要： A device includes a redistribution structure, including conductive features; dielectric layers; and an internal support within a first dielectric layer of the dielectric layers, wherein the internal support is free of passive and active devices; a first interconnect structure attached to a first side of the redistribution structure; a second interconnect structure attached to the first side of the redistribution structure, wherein the second interconnect structure is laterally adjacent the first interconnect structure, wherein the internal support laterally overlaps both the first interconnect structure and the second interconnect structure.

公开(公告)号：US11984374B2

公开(公告)日：2024-05-14

申请号：US17650932

申请日：2022-02-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jiun Yi Wu ,  Chen-Hua Yu ,  Chung-Shi Liu

IPC分类号： H01L23/31 ,  H01L21/56

CPC分类号： H01L23/3114 ,  H01L21/568

摘要： A method includes placing a package component over a carrier. The package component includes a device die. A core frame is placed over the carrier. The core frame forms a ring encircling the package component. The method further includes encapsulating the core frame and the package component in an encapsulant, forming redistribution lines over the core frame and the package component, and forming electrical connectors over and electrically coupling to the package component through the redistribution lines.

公开(公告)号：US20240077669A1

公开(公告)日：2024-03-07

申请号：US18111290

申请日：2023-02-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Hua Yu ,  Jiun Yi Wu ,  Szu-Wei Lu

IPC分类号： G02B6/12 ,  G02B6/26 ,  G02B6/42

CPC分类号： G02B6/12004 ,  G02B6/262 ,  G02B6/4239 ,  G02B2006/12102 ,  G02B2006/12104

摘要： An embodiment is a package including a package substrate and a package component bonded to the package substrate, the package component including an interposer, an optical die bonded to the interposer, the optical die including an optical coupler, an integrated circuit die bonded to the interposer adjacent the optical die, a lens adapter adhered to the optical die with a first optical glue, a mirror adhered to the lens adapter with a second optical glue, the mirror being aligned with the optical coupler of the optical die, and an optical fiber on the lens adapter, a first end of the optical fiber facing the mirror, the optical fiber being configured such that an optical data path extends from the first end of the optical fiber through the mirror, the second optical glue, the lens adapter, and the first optical glue to the optical coupler of the optical die.

公开(公告)号：US11894318B2

公开(公告)日：2024-02-06

申请号：US17097206

申请日：2020-11-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jiun Yi Wu ,  Chen-Hua Yu

IPC分类号： H01L23/00 ,  H01L23/538 ,  H01L21/48

CPC分类号： H01L23/562 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/35121

摘要： A device includes a redistribution structure, including conductive features; dielectric layers; and an internal support within a first dielectric layer of the dielectric layers, wherein the internal support is free of passive and active devices; a first interconnect structure attached to a first side of the redistribution structure; a second interconnect structure attached to the first side of the redistribution structure, wherein the second interconnect structure is laterally adjacent the first interconnect structure, wherein the internal support laterally overlaps both the first interconnect structure and the second interconnect structure.

公开(公告)号：US20230386919A1

公开(公告)日：2023-11-30

申请号：US18446748

申请日：2023-08-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jiun Yi Wu ,  Chen-Hua Yu

IPC分类号： H01L21/768 ,  H01L21/56 ,  H01L21/48 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L21/76895 ,  H01L21/561 ,  H01L21/486 ,  H01L24/19 ,  H01L24/32 ,  H01L24/33 ,  H01L25/50 ,  H01L25/0657 ,  H01L24/94 ,  H01L24/05 ,  H01L2924/181 ,  H01L2224/33181 ,  H01L2224/32145 ,  H01L2224/2101

摘要： In an embodiment, a structure includes a core substrate, a redistribution structure coupled to a first side of the core substrate, the redistribution structure including a plurality of redistribution layers, each of the plurality of redistribution layers comprising a dielectric layer and a metallization layer, and a first local interconnect component embedded in a first redistribution layer of the plurality of redistribution layers, the first local interconnect component including a substrate, an interconnect structure on the substrate, and bond pads on the interconnect structure, the bond pads of the first local interconnect component physically contacting a metallization layer of a second redistribution layer, the second redistribution layer being adjacent the first redistribution layer, the metallization layer of the second redistribution layer comprising first conductive vias, the dielectric layer of the first redistribution layer encapsulating the first local interconnect component.

公开(公告)号：US11699691B2

公开(公告)日：2023-07-11

申请号：US16953871

申请日：2020-11-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jiun Yi Wu

IPC分类号： H01L25/10 ,  H01L23/538 ,  H01L23/14 ,  H01L23/498 ,  H01L21/48 ,  H01L25/00 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L25/105 ,  H01L21/4803 ,  H01L21/4846 ,  H01L21/563 ,  H01L23/14 ,  H01L23/145 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/5384 ,  H01L23/5385 ,  H01L25/50 ,  H01L23/147 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15321 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/1305 ,  H01L2924/00

摘要： Some embodiments relate to a package. The package includes a first substrate, a second substrate, and an interposer frame between the first and second substrates. The first substrate has a first connection pad disposed on a first face thereof, and the second substrate has a second connection pad disposed on a second face thereof. The interposer frame is arranged between the first and second faces and generally separates the first substrate from the second substrate. The interposer frame includes a plurality of through substrate holes (TSHs) which pass entirely through the interposer frame. A TSH is aligned with the first and second connection pads, and solder extends through the TSH to electrically connect the first connection pad to the second connection pad.

公开(公告)号：US20230069031A1

公开(公告)日：2023-03-02

申请号：US17412966

申请日：2021-08-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jiun Yi Wu ,  Chen-Hua Yu ,  Chung-Shi Liu

IPC分类号： H01L23/538 ,  H01L25/065 ,  H01L23/498 ,  H01L25/00 ,  H01L21/48

摘要： A semiconductor structure includes a first redistribution structure, a first local interconnect component disposed on the first redistribution structure, and a first interconnect structure over a second side of the first local interconnect component. The first local interconnect component includes a first plurality of redistribution layers. The first plurality of redistribution layers includes a first plurality of conductive features on a first side of the first local interconnect component. Each of the first plurality of conductive features are coupled to respective conductive features of the first redistribution structure. The first interconnect structure includes a second plurality of conductive features and a third plurality of conductive features. The second plurality of conductive features are electrically coupled to the third plurality of conductive features through the first local interconnect component.

公开(公告)号：US11594498B2

公开(公告)日：2023-02-28

申请号：US16931992

申请日：2020-07-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jiun Yi Wu ,  Chen-Hua Yu ,  Chung-Shi Liu

IPC分类号： H01L23/538 ,  H01L21/48 ,  H01L25/00 ,  H01L25/065 ,  H01L23/00

摘要： In an embodiment, a structure includes a core substrate, a redistribution structure coupled, the redistribution structure including a plurality of redistribution layers, the plurality of redistribution layers comprising a dielectric layer and a metallization layer, a first local interconnect component embedded in a first redistribution layer of the plurality of redistribution layers, the first local interconnect component comprising conductive connectors, the conductive connectors being bonded to a metallization pattern of the first redistribution layer, the dielectric layer of the first redistribution layer encapsulating the first local interconnect component, a first integrated circuit die coupled to the redistribution structure, a second integrated circuit die coupled to the redistribution structure, an interconnect structure of the first local interconnect component electrically coupling the first integrated circuit die to the second integrated circuit die, and a set of conductive connectors coupled to a second side of the core substrate.