Invention Grant
- Patent Title: Memory controller performing selective and parallel error correction, system including the same and operating method of memory device
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Application No.: US17510898Application Date: 2021-10-26
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Publication No.: US11720442B2Publication Date: 2023-08-08
- Inventor: Hyeokjun Choe , Heehyun Nam , Jeongho Lee , Younho Jeon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20200154848 2020.11.18
- Main IPC: H03M13/15
- IPC: H03M13/15 ; G06F11/10 ; G06F11/07 ; G06F3/06

Abstract:
A memory controller is provided that is configured to control a memory accessed by a device connected to a host processor via a bus. The memory controller is configured to control a memory accessed by a device connected to a host processor via a bus, and includes a first interface circuit configured to communicate with the host processor; a second interface circuit configured to communicate with the memory; an error detection circuit configured to detect an error present in data received from the second interface circuit in response to a first read request received from the first interface circuit; a variable error correction circuit configured to correct the error based on at least one of a reference latency and a reference error correction level included in a first error correction option; and a fixed error correction circuit configured to correct the error in parallel with an operation of the variable error correction circuit.
Public/Granted literature
Information query
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