Invention Grant
- Patent Title: Memory system capable of compensating for kickback noise
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Application No.: US17864237Application Date: 2022-07-13
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Publication No.: US11721387B2Publication Date: 2023-08-08
- Inventor: Wei Lu Chu , Dong Pan
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- The original application number of the division: US17003163 2020.08.26
- Main IPC: G11C7/14
- IPC: G11C7/14 ; G11C11/4074 ; G11C11/4091 ; H03H7/06 ; G11C5/14 ; G05F1/575 ; G11C11/4063

Abstract:
Methods, systems, and devices for compensating for kickback noise are described. A regulator may include an input circuit, a bias circuit, and an enable circuit. The regulator may be configured so that the enable circuit is positioned between the input circuit and the bias circuit. A balance resistor may be included in a path between an input of the regulator and a gate of a bias transistor included in the bias transistor. A size of the balance resistor may be based on an amount of charge drawn by the bias transistor during an activation event. Dimensions of the bias transistor may be modified based on an amount of charge drawn by the bias transistor during an activation event.
Public/Granted literature
- US20220343964A1 MEMORY SYSTEM CAPABLE OF COMPENSATING FOR KICKBACK NOISE Public/Granted day:2022-10-27
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