Invention Grant
- Patent Title: Integrated fan out method utilizing a filler-free insulating material
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Application No.: US17220722Application Date: 2021-04-01
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Publication No.: US11721603B2Publication Date: 2023-08-08
- Inventor: Wei-Chih Chen , Sih-Hao Liao , Yu-Hsiang Hu , Hung-Jui Kuo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/498
Abstract:
A redistribution structure is made using filler-free insulating materials with a high shrinkage rate. As a result, good planarity may be achieved without the need to perform a planarization of each insulating layer of the redistribution structure, thereby simplifying the formation of the redistribution structure.
Public/Granted literature
- US20220122898A1 INTEGRATED FAN OUT PACKAGE AND METHOD Public/Granted day:2022-04-21
Information query
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