Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US17157182Application Date: 2021-01-25
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Publication No.: US11721699B2Publication Date: 2023-08-08
- Inventor: Wan-Yi Kao , Hung Cheng Lin , Chunyao Wang , Yung-Cheng Lu , Chi On Chui
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8234 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device and method of manufacture are provided. In embodiments a dielectric fin is formed in order to help isolate adjacent semiconductor fins. The dielectric fin is formed using a deposition process in which deposition times and temperatures are utilized to increase the resistance of the dielectric fin to subsequent etching processes.
Public/Granted literature
- US11764221B2 Semiconductor device and method of manufacture Public/Granted day:2023-09-19
Information query
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