Invention Grant
- Patent Title: Fabrication method of fin transistor
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Application No.: US17844067Application Date: 2022-06-20
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Publication No.: US11721702B2Publication Date: 2023-08-08
- Inventor: Sheng-Yao Huang , Yu-Ruei Chen , Chung-Liang Chu , Zen-Jay Tsai , Yu-Hsiang Lin
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: CN 1910948784.3 2019.10.08
- The original application number of the division: US16699474 2019.11.29
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/8234 ; H01L29/66 ; H01L29/78

Abstract:
A fin transistor structure is provided. The fin transistor structure includes a first substrate. An insulation layer is disposed on the first substrate. A plurality of fin structures are disposed on the insulation layer. A supporting dielectric layer fixes the fin structures at the fin structures at waist parts thereof. A gate structure layer is disposed on the supporting dielectric layer and covers a portion of the fin structures.
Public/Granted literature
- US20220320147A1 FABRICATION METHOD OF FIN TRANSISTOR Public/Granted day:2022-10-06
Information query
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