公开(公告)号：US20230207692A1

公开(公告)日：2023-06-29

申请号：US18116826

申请日：2023-03-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Sheng-Yao Huang ,  Yu-Ruei Chen ,  Zen-Jay Tsai ,  Yu-Hsiang Lin

IPC: H01L29/78 ,  H01L21/265 ,  H01L29/06 ,  H01L29/66 ,  H01L21/28

CPC classification number: H01L29/7816 ,  H01L21/26533 ,  H01L29/0653 ,  H01L29/66681 ,  H01L21/2822 ,  H01L21/28211

Abstract: A semiconductor structure includes a substrate, a buried oxide layer formed in the substrate and near a surface of the substrate, a gate dielectric layer formed on the substrate and covering the buried oxide layer, a gate structure formed on the gate dielectric layer and overlapping the buried oxide layer, and a source region and a drain region formed in the substrate and at two sides of the gate structure.

公开(公告)号：US11631771B2

公开(公告)日：2023-04-18

申请号：US17367637

申请日：2021-07-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US20210104554A1

公开(公告)日：2021-04-08

申请号：US16699474

申请日：2019-11-29

Applicant: United Microelectronics Corp.

Inventor： Sheng-Yao Huang ,  Yu-Ruei Chen ,  Chung-Liang Chu ,  Zen-Jay Tsai ,  Yu-Hsiang Lin

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234

Abstract: A fin transistor structure is provided. The fin transistor structure includes a first substrate. An insulation layer is disposed on the first substrate. A plurality of fin structures are disposed on the insulation layer. A supporting dielectric layer fixes the fin structures at the fin structures at waist parts thereof. A gate structure layer is disposed on the supporting dielectric layer and covers a portion of the fin structures.

公开(公告)号：US12040396B2

公开(公告)日：2024-07-16

申请号：US18116826

申请日：2023-03-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Sheng-Yao Huang ,  Yu-Ruei Chen ,  Zen-Jay Tsai ,  Yu-Hsiang Lin

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7816 ,  H01L21/26533 ,  H01L21/2822 ,  H01L29/0653 ,  H01L29/66681 ,  H01L21/28211

Abstract: A semiconductor structure includes a substrate, a buried oxide layer formed in the substrate and near a surface of the substrate, a gate dielectric layer formed on the substrate and covering the buried oxide layer, a gate structure formed on the gate dielectric layer and overlapping the buried oxide layer, and a source region and a drain region formed in the substrate and at two sides of the gate structure.

公开(公告)号：US20230178657A1

公开(公告)日：2023-06-08

申请号：US18103505

申请日：2023-01-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/51 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/1037

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US20210126131A1

公开(公告)日：2021-04-29

申请号：US17140114

申请日：2021-01-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US11721702B2

公开(公告)日：2023-08-08

申请号：US17844067

申请日：2022-06-20

Applicant: United Microelectronics Corp.

Inventor： Sheng-Yao Huang ,  Yu-Ruei Chen ,  Chung-Liang Chu ,  Zen-Jay Tsai ,  Yu-Hsiang Lin

IPC: H01L27/12 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/1211 ,  H01L21/823431 ,  H01L29/66795 ,  H01L29/785

Abstract: A fin transistor structure is provided. The fin transistor structure includes a first substrate. An insulation layer is disposed on the first substrate. A plurality of fin structures are disposed on the insulation layer. A supporting dielectric layer fixes the fin structures at the fin structures at waist parts thereof. A gate structure layer is disposed on the supporting dielectric layer and covers a portion of the fin structures.

公开(公告)号：US20220140139A1

公开(公告)日：2022-05-05

申请号：US17109153

申请日：2020-12-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Sheng-Yao Huang ,  Yu-Ruei Chen ,  Zen-Jay Tsai ,  Yu-Hsiang Lin

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L21/265

Abstract: A semiconductor structure includes a substrate, a buried oxide layer formed in the substrate and near a surface of the substrate, a gate dielectric layer formed on the substrate and covering the buried oxide layer, a gate structure formed on the gate dielectric layer and overlapping the buried oxide layer, and a source region and a drain region formed in the substrate and at two sides of the gate structure.

公开(公告)号：US11088285B2

公开(公告)日：2021-08-10

申请号：US16154644

申请日：2018-10-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US10446689B1

公开(公告)日：2019-10-15

申请号：US16274190

申请日：2019-02-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jen-Po Huang ,  Chien-Ming Lai ,  Yen-Chen Chen ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Seng Wah Liau ,  Han Chuan Fang

IPC: H01L29/768 ,  H01L29/417 ,  H01L29/66 ,  H01L21/4757 ,  H01L29/786

Abstract: An oxide semiconductor device includes a substrate, a first patterned oxide semiconductor layer, a source electrode, a drain electrode, and a sidewall spacer. The first patterned oxide semiconductor layer is disposed on the substrate. The source electrode and the drain electrode are disposed on the first patterned oxide semiconductor layer. The sidewall spacer is disposed on a sidewall of the first patterned oxide semiconductor layer. The sidewall spacer may be used to improve the performance of blocking impurities from entering the first patterned oxide semiconductor layer via the sidewall, and the electrical performance and the reliability of the oxide semiconductor device may be enhanced accordingly.