Invention Grant
- Patent Title: Deposition system and method
-
Application No.: US16994267Application Date: 2020-08-14
-
Publication No.: US11728226B2Publication Date: 2023-08-15
- Inventor: Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen , Yi-Ming Dai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed Intellectual Property Law Group LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; C23C14/35 ; C23C14/54 ; H01J37/32 ; H01J37/34

Abstract:
A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.
Information query
IPC分类: