Invention Grant
- Patent Title: Differential amplifier schemes for sensing memory cells
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Application No.: US17557825Application Date: 2021-12-21
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Publication No.: US11735234B2Publication Date: 2023-08-22
- Inventor: Daniele Vimercati , Xinwei Guo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C27/02
- IPC: G11C27/02 ; G11C7/06 ; H03F3/45 ; G11C11/16 ; G11C11/15

Abstract:
Methods, systems, and devices for differential amplifier schemes for sensing memory cells are described. In one example, an apparatus may include a memory cell, a differential amplifier having a first input node, a second input node, and an output node that is coupled with the first input node via a first capacitor, and a second capacitor coupled with the first input node. The apparatus may include a controller configured to cause the apparatus to bias the first capacitor, couple the memory cell with the first input node, and generate, at the output node, a sense signal based at least in part on biasing the first capacitor and coupling the memory cell with the first input node. The apparatus may also include a sense component configured to determine a logic state stored by the memory cell based at least in part on the sense signal.
Public/Granted literature
- US20220189514A1 DIFFERENTIAL AMPLIFIER SCHEMES FOR SENSING MEMORY CELLS Public/Granted day:2022-06-16
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