Invention Grant
- Patent Title: Tunnel junction selector MRAM
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Application No.: US17562680Application Date: 2021-12-27
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Publication No.: US11737284B2Publication Date: 2023-08-22
- Inventor: Mauricio Manfrini , Hon-Sum Philip Wong
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H10B61/00
- IPC: H10B61/00 ; H10N50/01 ; H10N50/80
Abstract:
A magnetoresistive random access memory (MRAM) cell includes a bottom electrode, a magnetic tunnel junction structure, a bipolar tunnel junction selector; and a top electrode. The tunnel junction selector includes a MgO tunnel barrier layer and provides a bipolar function for putting the MTJ structure in parallel or anti-parallel mode.
Public/Granted literature
- US20220123050A1 Tunnel Junction selector MRAM Public/Granted day:2022-04-21
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