Invention Grant
- Patent Title: Memory device, memory system, and method of operating the same
-
Application No.: US17587418Application Date: 2022-01-28
-
Publication No.: US11740967B2Publication Date: 2023-08-29
- Inventor: Jong-Wook Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20130028241 2013.03.15
- Main IPC: G11C29/52
- IPC: G11C29/52 ; G06F11/10 ; H03M13/09 ; H03M13/05

Abstract:
A memory device, a memory system, and a method of operating the same. The memory device includes a memory cell array including a plurality of memory cells and a write command determination unit (WCDU) that determines whether a write command input to the memory device is (to be) accompanied a masking signal. The WCDU produces a first control signal if the input write command is (to be) accompanied by a masking signal. A data masking unit combines a portion of read data read from the memory cell array with a corresponding portion of input write data corresponding to the write command and generates modulation data in response to the first control signal. An error correction code (ECC) engine generates parity of the modulation data.
Public/Granted literature
- US20220156147A1 MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF OPERATING THE SAME Public/Granted day:2022-05-19
Information query